TY - JOUR
T1 - Review of plasma-enhanced atomic layer deposition
T2 - Technical enabler of nanoscale device fabrication
AU - Kim, Hyungjun
AU - Oh, Il Kwon
PY - 2014/3
Y1 - 2014/3
N2 - With devices being scaled down to the nanometer regime, the need for atomic thickness control with high conformality is increasing. Atomic layer deposition (ALD) is a key technology enabler of nanoscale memory and logic devices owing to its excellent conformality and thickness controllability. Plasma-enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties than in conventional thermal ALD. These benefits make PE-ALD more attractive for nanoscale device fabrication. In this paper, the basic characteristics and film properties of PE-ALD processes will be reviewed, focusing on the application of PE-ALD in key components of nanoscale device fabrication: gate oxides, Cu interconnects, and nanoscale contacts.
AB - With devices being scaled down to the nanometer regime, the need for atomic thickness control with high conformality is increasing. Atomic layer deposition (ALD) is a key technology enabler of nanoscale memory and logic devices owing to its excellent conformality and thickness controllability. Plasma-enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties than in conventional thermal ALD. These benefits make PE-ALD more attractive for nanoscale device fabrication. In this paper, the basic characteristics and film properties of PE-ALD processes will be reviewed, focusing on the application of PE-ALD in key components of nanoscale device fabrication: gate oxides, Cu interconnects, and nanoscale contacts.
UR - http://www.scopus.com/inward/record.url?scp=84903217353&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903217353&partnerID=8YFLogxK
U2 - 10.7567/JJAP.53.03DA01
DO - 10.7567/JJAP.53.03DA01
M3 - Review article
AN - SCOPUS:84903217353
SN - 0021-4922
VL - 53
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 3 SPEC. ISSUE 2
M1 - 03DA01
ER -