Abstract
Recently, investigating the unique electrical properties of low-dimensional (One- and two-dimensional) materials as alternatives to silicon has become popular among researchers. In order to observe the intrinsic properties and device performance, it is essential to elucidate the electron transport at the electrode/nanomaterial interface. This study reviews various current approaches used to evaluate the contact resistance of electronic devices based on the most representative low-dimensional nano-materials such as carbon nanotubes, nanowires, graphene and molybdenum disulfide. Various analytical factors that have generally not been considered in conventional electronics are introduced to define the contact resistance within the nano-meter scale. Additionally, a comparison of three different methods for determining the contact resistance to interpret experimental data is conducted. Finally, several attempted efforts to reduce the contact resistance are presented.
| Original language | English |
|---|---|
| Pages (from-to) | 539-547 |
| Number of pages | 9 |
| Journal | Journal of Mechanical Science and Technology |
| Volume | 32 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2018 Feb 1 |
Bibliographical note
Funding Information:This work was partially supported by Korea Ministry of Environment as Global Top Project (2016002130005) and Development of diagnostic system for mild cognitive impairment due to Alzheimer's disease (2015-11-1684).
Publisher Copyright:
© 2018, The Korean Society of Mechanical Engineers and Springer-Verlag GmbH Germany, part of Springer Nature.
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering