Response to "comment on Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment'" [Appl. Phys. Lett. 98, 176101 (2011)]

Jin Woo Park; Hong Koo Baik; Taekyung Lim; Sanghyun Ju

doi:10.1063/1.3584002

Response to "comment on Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment'" [Appl. Phys. Lett. 98, 176101 (2011)]

Jin Woo Park, Hong Koo Baik, Taekyung Lim, Sanghyun Ju

Department of Materials Science and Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	176102
Journal	Applied Physics Letters
Volume	98
Issue number	17
DOIs	https://doi.org/10.1063/1.3584002
Publication status	Published - 2011 Apr 25

Bibliographical note

Funding Information:
This research was supported by the Converging Research Center Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010K000990).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3584002

Cite this

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author = "Park, {Jin Woo} and Baik, {Hong Koo} and Taekyung Lim and Sanghyun Ju",

note = "Funding Information: This research was supported by the Converging Research Center Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010K000990).",

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AU - Lim, Taekyung

AU - Ju, Sanghyun

N1 - Funding Information: This research was supported by the Converging Research Center Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010K000990).

PY - 2011/4/25

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JO - Applied Physics Letters

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ER -

Response to "comment on Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment'" [Appl. Phys. Lett. 98, 176101 (2011)]

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

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