Resistive Switching Properties through Iodine Migrations of a Hybrid Perovskite Insulating Layer

Dong Jun Kim; Young Jun Tak; Won Gi Kim; Jin Kyu Kim; Jong Hak Kim; Hyun Jae Kim

doi:10.1002/admi.201601035

Resistive Switching Properties through Iodine Migrations of a Hybrid Perovskite Insulating Layer

Dong Jun Kim, Young Jun Tak, Won Gi Kim, Jin Kyu Kim, Jong Hak Kim, Hyun Jae Kim

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

This study reports a low-temperature processable, resistive switching (RS) device based on an inorganic–organic hybrid perovskite, i.e., methylammonium lead iodide (CH₃NH₃PbI₃ or MAPbI₃) via a fast deposition–crystallization method, as the multifunctional insulator layer to form metal/insulator/metal structure in which Al and p⁺-Si wafer are used as the top and the bottom metal electrodes, respectively. The MAPbI₃-RS device shows acceptable RS characteristics with a switching window of 10³ at a low voltage region (≈5 V), a stable endurance during 200 cycles, and a high retention for a prolonged time at 10⁴ s. The operation mechanism of the MAPbI₃-RS device is based on ion (simultaneously vacancy) migration, especially iodine ions, which is analogous to that of oxygen ions in the conventional oxide-based RS devices, confirmed through X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy measurements. Furthermore, unusual multiresistance states are achieved from the MAPbI₃-RS device under light illumination due to the photosensitivity of MAPbI₃.

Original language	English
Article number	1601035
Journal	Advanced Materials Interfaces
Volume	4
Issue number	6
DOIs	https://doi.org/10.1002/admi.201601035
Publication status	Published - 2017 Mar 23

Bibliographical note

Funding Information:
D.J.K. and Y.J.T. contributed equally to this work. This work was supported by the Industrial Strategic Technology Development Program (10063038, Development of sub-micro in situ patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) and by the Center for Advanced Meta-Materials (NRF-2014M3A6B3063716).

Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering

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10.1002/admi.201601035

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title = "Resistive Switching Properties through Iodine Migrations of a Hybrid Perovskite Insulating Layer",

abstract = "This study reports a low-temperature processable, resistive switching (RS) device based on an inorganic–organic hybrid perovskite, i.e., methylammonium lead iodide (CH3NH3PbI3 or MAPbI3) via a fast deposition–crystallization method, as the multifunctional insulator layer to form metal/insulator/metal structure in which Al and p+-Si wafer are used as the top and the bottom metal electrodes, respectively. The MAPbI3-RS device shows acceptable RS characteristics with a switching window of 103 at a low voltage region (≈5 V), a stable endurance during 200 cycles, and a high retention for a prolonged time at 104 s. The operation mechanism of the MAPbI3-RS device is based on ion (simultaneously vacancy) migration, especially iodine ions, which is analogous to that of oxygen ions in the conventional oxide-based RS devices, confirmed through X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy measurements. Furthermore, unusual multiresistance states are achieved from the MAPbI3-RS device under light illumination due to the photosensitivity of MAPbI3.",

author = "Kim, {Dong Jun} and Tak, {Young Jun} and Kim, {Won Gi} and Kim, {Jin Kyu} and Kim, {Jong Hak} and Kim, {Hyun Jae}",

note = "Funding Information: D.J.K. and Y.J.T. contributed equally to this work. This work was supported by the Industrial Strategic Technology Development Program (10063038, Development of sub-micro in situ patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) and by the Center for Advanced Meta-Materials (NRF-2014M3A6B3063716). Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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AU - Kim, Hyun Jae

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N2 - This study reports a low-temperature processable, resistive switching (RS) device based on an inorganic–organic hybrid perovskite, i.e., methylammonium lead iodide (CH3NH3PbI3 or MAPbI3) via a fast deposition–crystallization method, as the multifunctional insulator layer to form metal/insulator/metal structure in which Al and p+-Si wafer are used as the top and the bottom metal electrodes, respectively. The MAPbI3-RS device shows acceptable RS characteristics with a switching window of 103 at a low voltage region (≈5 V), a stable endurance during 200 cycles, and a high retention for a prolonged time at 104 s. The operation mechanism of the MAPbI3-RS device is based on ion (simultaneously vacancy) migration, especially iodine ions, which is analogous to that of oxygen ions in the conventional oxide-based RS devices, confirmed through X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy measurements. Furthermore, unusual multiresistance states are achieved from the MAPbI3-RS device under light illumination due to the photosensitivity of MAPbI3.

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Resistive Switching Properties through Iodine Migrations of a Hybrid Perovskite Insulating Layer

Abstract

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