Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition

Minjae Kim, Yue Wang, Dong Eun Kim, Qingyi Shao, Hong Sub Lee, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


This study demonstrates a new resistive switching material, F-doped TiO2 (F:TiO2), fabricated by atomic layer deposition (ALD) with an in-house fluorine source for resistive random access memory (RRAM) devices. Controlling oxygen vacancies is required since RRAM uses resistive switching (RS) characteristics by redistributing oxygen ions in oxide, and poor oxygen defect control has been shown to significantly reduce RRAM reliability. Therefore, this study designed an F based RRAM device using fluorine anions rather than oxygen defect for the main agent of RS behavior. We developed the F:TiO2 RRAM material using a novel in situ doping method in ALD and investigated its RS behaviors. The Pt/F:TiO2/Pt device exhibited forming-less bipolar RS and self-rectifying behavior by fluorine anion migration, effectively reducing the sneak current in crossbar array architecture RRAM. The doped fluorine passivated and reduced oxygen related defects in TiO2, confirmed by x-ray photoelectron spectroscopy analysis. Adopting the F-based RS material by ALD provides a viable candidate for high reliability RRAM.

Original languageEnglish
Article number031105
JournalAPL Materials
Issue number3
Publication statusPublished - 2022 Mar 1

Bibliographical note

Publisher Copyright:
© 2022 Author(s).

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • General Engineering


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