Resistive switching characteristics of TiN/MnO2/Pt memory devices

Min Kyu Yang, Jae Wan Park, Tae Kuk Ko, Jeon kook Lee

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Bipolar resistive switching memory devices with a TiN/MnO2/Pt structure were investigated in a low power operation (250 μA/±0.6 V). The devices showed good endurance of 105 cycles at a 1 μs pulse and reliable data retention at both RT and 125 °C. Moreover, the benefits of a high device yield and potential multilevel storage make them promising devices in next generation nonvolatile memory applications. The cell area dependency suggests that the conducting mechanism in the low resistance states is due to the formation of locally conducting filaments. The results demonstrate the feasibility of high performance resistive switching memory devices based on transition metal oxides by using TiN as the top electrode.

Original languageEnglish
Pages (from-to)233-235
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Issue number8-9
Publication statusPublished - 2010 Sept

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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