RESET-first unipolar resistance switching behavior in annealed Nb 2O5 films

Kyumin Lee; Jonggi Kim; In Su Mok; Heedo Na; Dae Hong Ko; Hyunchul Sohn; Sunghoon Lee; Robert Sinclair

doi:10.1016/j.tsf.2014.03.003

RESET-first unipolar resistance switching behavior in annealed Nb ₂O₅ films

Kyumin Lee, Jonggi Kim, In Su Mok, Heedo Na, Dae Hong Ko, Hyunchul Sohn, Sunghoon Lee, Robert Sinclair

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

In this work, the effect of thermal annealing on the resistance switching behavior of Nb₂O₅ films was investigated in conjunction with an analysis of the chemical bonding states and crystal structure. The Nb₂O₅ films were deposited via reactive sputtering, and annealed via rapid thermal annealing at various temperatures up to 650°C. The crystal structure of the as-deposited Nb₂O₅ films transformed from amorphous to a hexagonal Nb₂O₅ crystalline phase with tetragonal NbO₂ following thermal annealing at 500°C. The conductivity of the Nb₂O₅ films increased drastically as the annealing temperature increased. An increase in the non-lattice oxygen in the Nb₂O₅ films was also observed with thermal annealing. Pt/Nb₂O₅/Pt stacks with the as-deposited Nb₂O₅ showed typical unipolar resistance switching behaviors after electro-forming; however, the Nb₂O ₅ film devices annealed at 500°C showed RESET-first resistance switching behavior without prior electro-forming. The RESET-first resistance switching in annealed Nb₂O₅ is believed to be due to the nano-scale conductive path formed in the annealed Nb₂O₅ films.

Original language	English
Pages (from-to)	423-429
Number of pages	7
Journal	Thin Solid Films
Volume	558
DOIs	https://doi.org/10.1016/j.tsf.2014.03.003
Publication status	Published - 2014 May 2

Bibliographical note

Funding Information:
This work was supported by the industry–university cooperation project of Samsung Electronics and by the second stage of the Brain Korea 21 project (BK21).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2014.03.003

Cite this

@article{934197d15cac488fa68d0080c9fb2f12,

title = "RESET-first unipolar resistance switching behavior in annealed Nb 2O5 films",

abstract = "In this work, the effect of thermal annealing on the resistance switching behavior of Nb2O5 films was investigated in conjunction with an analysis of the chemical bonding states and crystal structure. The Nb2O5 films were deposited via reactive sputtering, and annealed via rapid thermal annealing at various temperatures up to 650°C. The crystal structure of the as-deposited Nb2O5 films transformed from amorphous to a hexagonal Nb2O5 crystalline phase with tetragonal NbO2 following thermal annealing at 500°C. The conductivity of the Nb2O5 films increased drastically as the annealing temperature increased. An increase in the non-lattice oxygen in the Nb2O5 films was also observed with thermal annealing. Pt/Nb2O5/Pt stacks with the as-deposited Nb2O5 showed typical unipolar resistance switching behaviors after electro-forming; however, the Nb2O 5 film devices annealed at 500°C showed RESET-first resistance switching behavior without prior electro-forming. The RESET-first resistance switching in annealed Nb2O5 is believed to be due to the nano-scale conductive path formed in the annealed Nb2O5 films.",

author = "Kyumin Lee and Jonggi Kim and Mok, {In Su} and Heedo Na and Ko, {Dae Hong} and Hyunchul Sohn and Sunghoon Lee and Robert Sinclair",

note = "Funding Information: This work was supported by the industry–university cooperation project of Samsung Electronics and by the second stage of the Brain Korea 21 project (BK21). ",

year = "2014",

month = may,

day = "2",

doi = "10.1016/j.tsf.2014.03.003",

language = "English",

volume = "558",

pages = "423--429",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - RESET-first unipolar resistance switching behavior in annealed Nb 2O5 films

AU - Lee, Kyumin

AU - Kim, Jonggi

AU - Mok, In Su

AU - Na, Heedo

AU - Ko, Dae Hong

AU - Sohn, Hyunchul

AU - Lee, Sunghoon

AU - Sinclair, Robert

N1 - Funding Information: This work was supported by the industry–university cooperation project of Samsung Electronics and by the second stage of the Brain Korea 21 project (BK21).

PY - 2014/5/2

Y1 - 2014/5/2

N2 - In this work, the effect of thermal annealing on the resistance switching behavior of Nb2O5 films was investigated in conjunction with an analysis of the chemical bonding states and crystal structure. The Nb2O5 films were deposited via reactive sputtering, and annealed via rapid thermal annealing at various temperatures up to 650°C. The crystal structure of the as-deposited Nb2O5 films transformed from amorphous to a hexagonal Nb2O5 crystalline phase with tetragonal NbO2 following thermal annealing at 500°C. The conductivity of the Nb2O5 films increased drastically as the annealing temperature increased. An increase in the non-lattice oxygen in the Nb2O5 films was also observed with thermal annealing. Pt/Nb2O5/Pt stacks with the as-deposited Nb2O5 showed typical unipolar resistance switching behaviors after electro-forming; however, the Nb2O 5 film devices annealed at 500°C showed RESET-first resistance switching behavior without prior electro-forming. The RESET-first resistance switching in annealed Nb2O5 is believed to be due to the nano-scale conductive path formed in the annealed Nb2O5 films.

AB - In this work, the effect of thermal annealing on the resistance switching behavior of Nb2O5 films was investigated in conjunction with an analysis of the chemical bonding states and crystal structure. The Nb2O5 films were deposited via reactive sputtering, and annealed via rapid thermal annealing at various temperatures up to 650°C. The crystal structure of the as-deposited Nb2O5 films transformed from amorphous to a hexagonal Nb2O5 crystalline phase with tetragonal NbO2 following thermal annealing at 500°C. The conductivity of the Nb2O5 films increased drastically as the annealing temperature increased. An increase in the non-lattice oxygen in the Nb2O5 films was also observed with thermal annealing. Pt/Nb2O5/Pt stacks with the as-deposited Nb2O5 showed typical unipolar resistance switching behaviors after electro-forming; however, the Nb2O 5 film devices annealed at 500°C showed RESET-first resistance switching behavior without prior electro-forming. The RESET-first resistance switching in annealed Nb2O5 is believed to be due to the nano-scale conductive path formed in the annealed Nb2O5 films.

UR - http://www.scopus.com/inward/record.url?scp=84898780957&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898780957&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2014.03.003

DO - 10.1016/j.tsf.2014.03.003

M3 - Article

AN - SCOPUS:84898780957

SN - 0040-6090

VL - 558

SP - 423

EP - 429

JO - Thin Solid Films

JF - Thin Solid Films

ER -