Reset First Resistive Switching in Ni1−x O Thin Films as Charge Transfer Insulator Deposited by Reactive RF Magnetron Sputtering

Dae Woo Kim, Tae Ho Kim, Jae Yeon Kim, Hyun Chul Sohn

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Reset-first resistive random access memory (RRAM) devices were demonstrated for offstoichiometric Ni1−x O thin films deposited using reactive sputtering with a high oxygen partial pressure. The Ni1−x O based RRAM devices exhibited both unipolar and bipolar resistive switching characteristics without an electroforming step. Auger electron spectroscopy showed nickel deficiency in the Ni1−x O films, and X-ray photoemission spectroscopy showed that the Ni3+ valence state in the Ni1−x O films increased with increasing oxygen partial pressure. Conductive atomic force microscopy showed that the conductivity of the Ni1−x O films increased with increasing oxygen partial pressure during deposition, possibly contributing to the reset-first switching of the Ni1−x O films.

Original languageEnglish
Article number2231
JournalNanomaterials
Volume12
Issue number13
DOIs
Publication statusPublished - 2022 Jul 1

Bibliographical note

Publisher Copyright:
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.

All Science Journal Classification (ASJC) codes

  • General Chemical Engineering
  • General Materials Science

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