Reproducible resistance switching of defect-engineered NiOx with metallic Nb impurity

Jonggi Kim; Heedo Na; Sunghoon Lee; Kyumin Lee; Jung Ho Yoo; Dae Hong Ko; Hyunchul Sohn

doi:10.1016/j.tsf.2011.05.074

Reproducible resistance switching of defect-engineered NiO_x with metallic Nb impurity

Jonggi Kim, Heedo Na, Sunghoon Lee, Kyumin Lee, Jung Ho Yoo, Dae Hong Ko, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The effect of Nb doping on the resistance switching characteristics of NiO_x films was investigated. Pt/Nb-doped NiO_x/Pt metal-insulator-metal stacks were fabricated using NiO_x films with various Nb contents sputtered by reactive dc magnetron sputtering. The resistance switching behaviors of the metal-insulator-metal stacks were then examined in conjunction with a study on the physical properties such as the chemical bonding of NiO_x films. Nb doping of NiO_x at a T_dep of 400 °C and an O₂ partial pressure of 5% resulted in an improved endurance of SET/RESET processes with a narrower distribution of V_SET, and a larger memory window compared to un-doped NiO_x films. NiO_x with 5.47% Nb deposited at an O ₂ partial pressure of 15% showed bistable resistance switching behavior while undoped NiO_x material, deposited under the same condition did not. A study of the chemical bonding states by X-ray photoelectron spectroscopy showed that the Nb-doping of NiO_x films produced an increase in the density of Ni⁰ and a reduction in the density of Ni³⁺, compared to corresponding values for undoped NiO_x films deposited under the same condition. The resistive switching behavior of NiO_x was enhanced by defect engineering with metal impurity with different oxidation valence.

Original language	English
Pages (from-to)	8119-8124
Number of pages	6
Journal	Thin Solid Films
Volume	519
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2011.05.074
Publication status	Published - 2011 Sept 1

Bibliographical note

Funding Information:
This work was supported by the Industry–University Cooperation Project of Samsung Electronics and sponsored by “ National Program for 0.1-Terabit Nonvolatile Memory Device Development ” and the second stage of the Brain Korea 21 project (BK21) .

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2011.05.074

Cite this

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title = "Reproducible resistance switching of defect-engineered NiOx with metallic Nb impurity",

abstract = "The effect of Nb doping on the resistance switching characteristics of NiOx films was investigated. Pt/Nb-doped NiOx/Pt metal-insulator-metal stacks were fabricated using NiOx films with various Nb contents sputtered by reactive dc magnetron sputtering. The resistance switching behaviors of the metal-insulator-metal stacks were then examined in conjunction with a study on the physical properties such as the chemical bonding of NiOx films. Nb doping of NiOx at a Tdep of 400 °C and an O2 partial pressure of 5% resulted in an improved endurance of SET/RESET processes with a narrower distribution of VSET, and a larger memory window compared to un-doped NiOx films. NiOx with 5.47% Nb deposited at an O 2 partial pressure of 15% showed bistable resistance switching behavior while undoped NiOx material, deposited under the same condition did not. A study of the chemical bonding states by X-ray photoelectron spectroscopy showed that the Nb-doping of NiOx films produced an increase in the density of Ni0 and a reduction in the density of Ni3+, compared to corresponding values for undoped NiOx films deposited under the same condition. The resistive switching behavior of NiOx was enhanced by defect engineering with metal impurity with different oxidation valence.",

author = "Jonggi Kim and Heedo Na and Sunghoon Lee and Kyumin Lee and Yoo, {Jung Ho} and Ko, {Dae Hong} and Hyunchul Sohn",

note = "Funding Information: This work was supported by the Industry–University Cooperation Project of Samsung Electronics and sponsored by “ National Program for 0.1-Terabit Nonvolatile Memory Device Development ” and the second stage of the Brain Korea 21 project (BK21) .",

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AU - Kim, Jonggi

AU - Na, Heedo

AU - Lee, Sunghoon

AU - Lee, Kyumin

AU - Yoo, Jung Ho

AU - Ko, Dae Hong

AU - Sohn, Hyunchul

N1 - Funding Information: This work was supported by the Industry–University Cooperation Project of Samsung Electronics and sponsored by “ National Program for 0.1-Terabit Nonvolatile Memory Device Development ” and the second stage of the Brain Korea 21 project (BK21) .

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N2 - The effect of Nb doping on the resistance switching characteristics of NiOx films was investigated. Pt/Nb-doped NiOx/Pt metal-insulator-metal stacks were fabricated using NiOx films with various Nb contents sputtered by reactive dc magnetron sputtering. The resistance switching behaviors of the metal-insulator-metal stacks were then examined in conjunction with a study on the physical properties such as the chemical bonding of NiOx films. Nb doping of NiOx at a Tdep of 400 °C and an O2 partial pressure of 5% resulted in an improved endurance of SET/RESET processes with a narrower distribution of VSET, and a larger memory window compared to un-doped NiOx films. NiOx with 5.47% Nb deposited at an O 2 partial pressure of 15% showed bistable resistance switching behavior while undoped NiOx material, deposited under the same condition did not. A study of the chemical bonding states by X-ray photoelectron spectroscopy showed that the Nb-doping of NiOx films produced an increase in the density of Ni0 and a reduction in the density of Ni3+, compared to corresponding values for undoped NiOx films deposited under the same condition. The resistive switching behavior of NiOx was enhanced by defect engineering with metal impurity with different oxidation valence.

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