Reply to "comment on metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed"

Jin Sung Kim, Hee Sung Lee, Seongil Im

Research output: Contribution to journalLetterpeer-review

Original languageEnglish
Pages (from-to)1716-1717
Number of pages2
JournalACS Nano
Issue number2
Publication statusPublished - 2016 Feb 23

Bibliographical note

Funding Information:
The authors were supported by NRF (NRL program, Grant No. 2014R1A2A1A01004815), Creative Materials Discovery Program through NRF funded by the Ministry of Science, ICT and Future Planning (Grant No. 2015M3D1A1068061), the Yonsei University (Future-leading Research Initiative of 2014, Grant No. 2014-22-0168), and Brain Korea 21 plus Program.

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy

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