Removal of interfacial layer in HfO2 gate stack by post-gate cleaning using NF3/NH3 dry cleaning technique

Min Seon Lee; Hoon Jung Oh; Joo Hee Lee; In Geun Lee; Woo Gon Shin; Sung Yong Kang; Dae Hong Ko

doi:10.4028/www.scientific.net/SSP.219.11

Removal of interfacial layer in HfO₂ gate stack by post-gate cleaning using NF₃/NH₃ dry cleaning technique

Min Seon Lee, Hoon Jung Oh, Joo Hee Lee, In Geun Lee, Woo Gon Shin, Sung Yong Kang, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Ultra Clean Processing of Semiconductor Surfaces XII
Editors	Paul W. Mertens, Marc Meuris, Marc Heyns, Marc Meuris, Marc Heyns
Publisher	Trans Tech Publications Ltd
Pages	11-15
Number of pages	5
ISBN (Electronic)	9783038352426
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.219.11
Publication status	Published - 2015
Event	12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2014 - Brussels, Belgium Duration: 2014 Sept 21 → 2014 Sept 24

Publication series

Name	Solid State Phenomena
Volume	219
ISSN (Print)	1012-0394
ISSN (Electronic)	1662-9779

Other

Other	12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2014
Country/Territory	Belgium
City	Brussels
Period	14/9/21 → 14/9/24

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
General Materials Science
Condensed Matter Physics

Access to Document

10.4028/www.scientific.net/SSP.219.11

Cite this

Lee, M. S., Oh, H. J., Lee, J. H., Lee, I. G., Shin, W. G., Kang, S. Y., & Ko, D. H. (2015). Removal of interfacial layer in HfO₂ gate stack by post-gate cleaning using NF₃/NH₃ dry cleaning technique. In P. W. Mertens, M. Meuris, M. Heyns, M. Meuris, & M. Heyns (Eds.), Ultra Clean Processing of Semiconductor Surfaces XII (pp. 11-15). (Solid State Phenomena; Vol. 219). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.219.11

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title = "Removal of interfacial layer in HfO2 gate stack by post-gate cleaning using NF3/NH3 dry cleaning technique",

keywords = "Dry cleaning, HfO, NF3/NH3 plasma, Post-gate cleaning",

author = "Lee, {Min Seon} and Oh, {Hoon Jung} and Lee, {Joo Hee} and Lee, {In Geun} and Shin, {Woo Gon} and Kang, {Sung Yong} and Ko, {Dae Hong}",

year = "2015",

doi = "10.4028/www.scientific.net/SSP.219.11",

language = "English",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

pages = "11--15",

editor = "Mertens, {Paul W.} and Marc Meuris and Marc Heyns and Marc Meuris and Marc Heyns",

booktitle = "Ultra Clean Processing of Semiconductor Surfaces XII",

note = "12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2014 ; Conference date: 21-09-2014 Through 24-09-2014",

}

Lee, MS, Oh, HJ, Lee, JH, Lee, IG, Shin, WG, Kang, SY & Ko, DH 2015, Removal of interfacial layer in HfO₂ gate stack by post-gate cleaning using NF₃/NH₃ dry cleaning technique. in PW Mertens, M Meuris, M Heyns, M Meuris & M Heyns (eds), Ultra Clean Processing of Semiconductor Surfaces XII. Solid State Phenomena, vol. 219, Trans Tech Publications Ltd, pp. 11-15, 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2014, Brussels, Belgium, 14/9/21. https://doi.org/10.4028/www.scientific.net/SSP.219.11

Removal of interfacial layer in HfO₂ gate stack by post-gate cleaning using NF₃/NH₃ dry cleaning technique. / Lee, Min Seon; Oh, Hoon Jung; Lee, Joo Hee et al.
Ultra Clean Processing of Semiconductor Surfaces XII. ed. / Paul W. Mertens; Marc Meuris; Marc Heyns; Marc Meuris; Marc Heyns. Trans Tech Publications Ltd, 2015. p. 11-15 (Solid State Phenomena; Vol. 219).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Removal of interfacial layer in HfO2 gate stack by post-gate cleaning using NF3/NH3 dry cleaning technique

AU - Lee, Min Seon

AU - Oh, Hoon Jung

AU - Lee, Joo Hee

AU - Lee, In Geun

AU - Shin, Woo Gon

AU - Kang, Sung Yong

AU - Ko, Dae Hong

PY - 2015

Y1 - 2015

KW - Dry cleaning

KW - HfO

KW - NF3/NH3 plasma

KW - Post-gate cleaning

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M3 - Conference contribution

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T3 - Solid State Phenomena

SP - 11

EP - 15

BT - Ultra Clean Processing of Semiconductor Surfaces XII

A2 - Mertens, Paul W.

A2 - Meuris, Marc

A2 - Heyns, Marc

A2 - Meuris, Marc

A2 - Heyns, Marc

PB - Trans Tech Publications Ltd

T2 - 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2014

Y2 - 21 September 2014 through 24 September 2014

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Lee MS, Oh HJ, Lee JH, Lee IG, Shin WG, Kang SY et al. Removal of interfacial layer in HfO₂ gate stack by post-gate cleaning using NF₃/NH₃ dry cleaning technique. In Mertens PW, Meuris M, Heyns M, Meuris M, Heyns M, editors, Ultra Clean Processing of Semiconductor Surfaces XII. Trans Tech Publications Ltd. 2015. p. 11-15. (Solid State Phenomena). doi: 10.4028/www.scientific.net/SSP.219.11