Removal of high-dose P⁺ ion-implanted photoresist on GaAs in the mixture of dimethyl sulfoxide and acetonitrile

The mixture of dimethyl sulfoxide and acetonitrile removed the P⁺ ion-implanted photoresist on the GaAs wafer but left photoresist residues in the GaAs trench structures. When 1 vol% of HF was added to the solution, the ion-implanted photoresist on the trench-patterned GaAs prepared with the implantation dose of 5 × 10¹⁵ ions/cm² at the implantation energy of 70 keV was completely removed, even at 30 °C. The enhancement of the ion-implanted photoresist removal efficiency is attributed to the increased interaction energy between the implanted photoresist and the solution that results from their similarities in the dispersive-to-polar component ratios.