@inproceedings{45a2a6a72af7488e807177f1882fa39e,
title = "Reliability of oxide thin film transistors under the gate bias stress with 400 nm wavelength light illumination",
abstract = "We have investigated the reliability of the inverted-staggered etch stopper structure oxide-based TFTs under negative gate bias stress combined with 400 nm wavelength light illumination and the relationship between the carrier concentration at the channel and the extent of V th shift. It was found that the photo-induced holes cause the severe V th degradation at the beginning of stress and the hole trapping rate of a single hole is not altered with the increase of the hole concentration. In oxide-based TFTs, the hole concentration at the channel is the determinant factor of the reliability.",
author = "Lee, {Soo Yeon} and Kim, {Sun Jae} and Yongwook Lee and Lee, {Woo Geun} and Yoon, {Kap Soo} and Kwon, {Jang Yeon} and Han, {Min Koo}",
year = "2012",
doi = "10.1557/opl.2011.950",
language = "English",
isbn = "9781605112985",
series = "Materials Research Society Symposium Proceedings",
pages = "253--257",
booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2011",
note = "2011 MRS Spring Meeting ; Conference date: 25-04-2011 Through 29-04-2011",
}