@inproceedings{9d0fd79e3bbe40e2bc5bf4d7ea0fa3d5,
title = "Reliability of MIM HAO capacitor for 70NM DRAM",
abstract = "In order to verify the package reliability of MIM HAO capacitor module, mass productive 256M DDR processes with 0.10μm design rule were adopted. The used capacitor dielectrics were HAH and HfxAlyOz and showed Tox.eq of 12{\AA} and Lc of < 0.2fA/cell, respectively. With proper thermal compensation for adjusting the cell Vt, we could get high probe test yield, and high package yield when MIM HAO capacitor was introduced instead of SIS Al2O 3 capacitor. With package samples, refresh time of device did not degrade after IR and EFR stresses and finally, we could confirm the reliability of MIM HAO capacitor in package level through long term test of operation lifetime.",
author = "Kwon Hong and Kil, {Deok Sin} and Woo, {Hyun Kyung} and Joosung Kim and Song, {Han Sang} and Park, {Ki Seon} and Yeom, {Seung Jin} and Yang, {Hong Seon} and Roh, {Jae Sung} and Sohn, {Hyun Chul} and Kim, {Jin Woong} and Park, {Sung Wook}",
year = "2005",
language = "English",
isbn = "0780388038",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "686--687",
booktitle = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual",
note = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual ; Conference date: 17-04-2005 Through 21-04-2005",
}