The reliability of 1.55-μm wavelength InGaAs waveguide photodiodes (WGPDs) fabricated by metal-organic chemical vapor deposition is investigated for 40-Gb/s optical receiver applications. Reliability for both high-temperature storage and accelerated life tests obtained by monitoring both the dark current and the breakdown voltage is examined. The median device lifetime and the activation energy of the degradation mechanism are extracted for WGPD test structures. The device lifetimes are examined via statistical analysis which is highly reliable in predicting the device lifetime under practical conditions. The degradation mechanism for the WGPD test structures can be explained by the formation of leakage current path by ionic impurities in the passivation layer on the exposed p-n junction. Nevertheless, it can be concluded that the WGPD test structures exhibit sufficient reliability for practical 40-Gb/s optical receiver applications.
|Number of pages||6|
|Journal||IEEE Transactions on Device and Materials Reliability|
|Publication status||Published - 2005 Jun|
Bibliographical noteFunding Information:
Manuscript received April 27, 2004; revised December 15, 2004. This work was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Assessment (IITA).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering