Reliability of InGaAs waveguide photodiodes for 40-Gb/s optical receivers

Han Sung Joo; Su Chang Jeon; Bongyong Lee; Hongil Yoon; Yong Hwan Kwon; Joong Seon Choe; Ilgu Yun

doi:10.1109/TDMR.2005.846980

Reliability of InGaAs waveguide photodiodes for 40-Gb/s optical receivers

Han Sung Joo, Su Chang Jeon, Bongyong Lee, Hongil Yoon, Yong Hwan Kwon, Joong Seon Choe, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The reliability of 1.55-μm wavelength InGaAs waveguide photodiodes (WGPDs) fabricated by metal-organic chemical vapor deposition is investigated for 40-Gb/s optical receiver applications. Reliability for both high-temperature storage and accelerated life tests obtained by monitoring both the dark current and the breakdown voltage is examined. The median device lifetime and the activation energy of the degradation mechanism are extracted for WGPD test structures. The device lifetimes are examined via statistical analysis which is highly reliable in predicting the device lifetime under practical conditions. The degradation mechanism for the WGPD test structures can be explained by the formation of leakage current path by ionic impurities in the passivation layer on the exposed p-n junction. Nevertheless, it can be concluded that the WGPD test structures exhibit sufficient reliability for practical 40-Gb/s optical receiver applications.

Original language	English
Pages (from-to)	262-267
Number of pages	6
Journal	IEEE Transactions on Device and Materials Reliability
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2005.846980
Publication status	Published - 2005 Jun

Bibliographical note

Funding Information:
Manuscript received April 27, 2004; revised December 15, 2004. This work was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Assessment (IITA).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

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Cite this

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title = "Reliability of InGaAs waveguide photodiodes for 40-Gb/s optical receivers",

abstract = "The reliability of 1.55-μm wavelength InGaAs waveguide photodiodes (WGPDs) fabricated by metal-organic chemical vapor deposition is investigated for 40-Gb/s optical receiver applications. Reliability for both high-temperature storage and accelerated life tests obtained by monitoring both the dark current and the breakdown voltage is examined. The median device lifetime and the activation energy of the degradation mechanism are extracted for WGPD test structures. The device lifetimes are examined via statistical analysis which is highly reliable in predicting the device lifetime under practical conditions. The degradation mechanism for the WGPD test structures can be explained by the formation of leakage current path by ionic impurities in the passivation layer on the exposed p-n junction. Nevertheless, it can be concluded that the WGPD test structures exhibit sufficient reliability for practical 40-Gb/s optical receiver applications.",

keywords = "Optical receiver, Reliability, Waveguide photodiodes",

author = "Joo, {Han Sung} and Jeon, {Su Chang} and Bongyong Lee and Hongil Yoon and Kwon, {Yong Hwan} and Choe, {Joong Seon} and Ilgu Yun",

note = "Funding Information: Manuscript received April 27, 2004; revised December 15, 2004. This work was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Assessment (IITA).",

year = "2005",

month = jun,

doi = "10.1109/TDMR.2005.846980",

language = "English",

volume = "5",

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T1 - Reliability of InGaAs waveguide photodiodes for 40-Gb/s optical receivers

AU - Joo, Han Sung

AU - Jeon, Su Chang

AU - Lee, Bongyong

AU - Yoon, Hongil

AU - Kwon, Yong Hwan

AU - Choe, Joong Seon

AU - Yun, Ilgu

N1 - Funding Information: Manuscript received April 27, 2004; revised December 15, 2004. This work was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Assessment (IITA).

PY - 2005/6

Y1 - 2005/6

N2 - The reliability of 1.55-μm wavelength InGaAs waveguide photodiodes (WGPDs) fabricated by metal-organic chemical vapor deposition is investigated for 40-Gb/s optical receiver applications. Reliability for both high-temperature storage and accelerated life tests obtained by monitoring both the dark current and the breakdown voltage is examined. The median device lifetime and the activation energy of the degradation mechanism are extracted for WGPD test structures. The device lifetimes are examined via statistical analysis which is highly reliable in predicting the device lifetime under practical conditions. The degradation mechanism for the WGPD test structures can be explained by the formation of leakage current path by ionic impurities in the passivation layer on the exposed p-n junction. Nevertheless, it can be concluded that the WGPD test structures exhibit sufficient reliability for practical 40-Gb/s optical receiver applications.

AB - The reliability of 1.55-μm wavelength InGaAs waveguide photodiodes (WGPDs) fabricated by metal-organic chemical vapor deposition is investigated for 40-Gb/s optical receiver applications. Reliability for both high-temperature storage and accelerated life tests obtained by monitoring both the dark current and the breakdown voltage is examined. The median device lifetime and the activation energy of the degradation mechanism are extracted for WGPD test structures. The device lifetimes are examined via statistical analysis which is highly reliable in predicting the device lifetime under practical conditions. The degradation mechanism for the WGPD test structures can be explained by the formation of leakage current path by ionic impurities in the passivation layer on the exposed p-n junction. Nevertheless, it can be concluded that the WGPD test structures exhibit sufficient reliability for practical 40-Gb/s optical receiver applications.

KW - Optical receiver

KW - Reliability

KW - Waveguide photodiodes

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Reliability of InGaAs waveguide photodiodes for 40-Gb/s optical receivers

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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