Phase-change memory (PCM) devices are one of the most promising memory devices to replace the flash memory devices in terms of both scalability and performances. However, typically high programming current to operate devices is a fatal problem in comparison with flash memory. Therefore, many studies have been investigated by changing the contact area and optimizing the structure. In addition, in perspective of characteristic of reliability, the drift and noise are the important problem to degrade the characteristic of devices and the flicker noise is one of the crucial factors in amorphous chalcogenide-based PCM devices. In this paper, we examined the pore-like structure, which is one of the promising structures having small reset current, comparing with conventional mushroom structure by the device reliability analysis for flicker noise using TCAD modeling and simulation.
|Number of pages||3|
|Publication status||Published - 2015 Aug|
Bibliographical noteFunding Information:
This research was supported by the Sk Hynix [no. 2014-11-0230 ]. Also, this work was partially supported by the Institute of BioMed IT, Energy IT and Smart IT Technology (BEST) [no. 2014-11-1320 ], a Brain Korea 21 plus program, Yonsei University.
© 2015 Elsevier Ltd.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering