Reliability assessment of multiple quantum well avalanche photodiodes

Ilgu Yun; Hicham M. Menkara; Yang Wang; Ismail H. Oguzman; Jan Kolnik; Kevin F. Brennan; Gary S. May; Christopher J. Summers; Brent K. Wagner

doi:10.1109/irps.1995.363696

Reliability assessment of multiple quantum well avalanche photodiodes

Ilgu Yun, Hicham M. Menkara, Yang Wang, Ismail H. Oguzman, Jan Kolnik, Kevin F. Brennan, Gary S. May, Christopher J. Summers, Brent K. Wagner

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

The reliability of doped-barrier AlGaAs/GaAs multi-quantum well avalanche photodiodes fabricated by MBE is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron-beam induced current (EBIC) method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

Original language	English
Pages (from-to)	200-204
Number of pages	5
Journal	Annual Proceedings - Reliability Physics (Symposium)
DOIs	https://doi.org/10.1109/irps.1995.363696
Publication status	Published - 1995
Event	Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA Duration: 1995 Apr 4 → 1995 Apr 6

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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10.1109/irps.1995.363696

Cite this

@article{5204342d73b54d5cbdc7e39828b441ad,

title = "Reliability assessment of multiple quantum well avalanche photodiodes",

abstract = "The reliability of doped-barrier AlGaAs/GaAs multi-quantum well avalanche photodiodes fabricated by MBE is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron-beam induced current (EBIC) method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.",

author = "Ilgu Yun and Menkara, {Hicham M.} and Yang Wang and Oguzman, {Ismail H.} and Jan Kolnik and Brennan, {Kevin F.} and May, {Gary S.} and Summers, {Christopher J.} and Wagner, {Brent K.}",

year = "1995",

doi = "10.1109/irps.1995.363696",

language = "English",

pages = "200--204",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings ; Conference date: 04-04-1995 Through 06-04-1995",

}

TY - JOUR

T1 - Reliability assessment of multiple quantum well avalanche photodiodes

AU - Yun, Ilgu

AU - Menkara, Hicham M.

AU - Wang, Yang

AU - Oguzman, Ismail H.

AU - Kolnik, Jan

AU - Brennan, Kevin F.

AU - May, Gary S.

AU - Summers, Christopher J.

AU - Wagner, Brent K.

PY - 1995

Y1 - 1995

N2 - The reliability of doped-barrier AlGaAs/GaAs multi-quantum well avalanche photodiodes fabricated by MBE is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron-beam induced current (EBIC) method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

AB - The reliability of doped-barrier AlGaAs/GaAs multi-quantum well avalanche photodiodes fabricated by MBE is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron-beam induced current (EBIC) method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

UR - http://www.scopus.com/inward/record.url?scp=0029234795&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029234795&partnerID=8YFLogxK

U2 - 10.1109/irps.1995.363696

DO - 10.1109/irps.1995.363696

M3 - Conference article

AN - SCOPUS:0029234795

SN - 0099-9512

SP - 200

EP - 204

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings

Y2 - 4 April 1995 through 6 April 1995

ER -

Reliability assessment of multiple quantum well avalanche photodiodes

Abstract

All Science Journal Classification (ASJC) codes

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