Reliability analysis of ultra low-temperature polycrystalline silicon thin-film transistors

Hitoshi Ueno; Yuta Sugawara; Hiroshi Yano; Tomoaki Hatayama; Yukiharu Uraoka; Takashi Fuyuki; Ji Sim Jung; Kyung Bae Park; K. I.M. Jong Man; Jang Yeon Kwon; Takashi Noguchi

doi:10.1143/JJAP.46.1303

Reliability analysis of ultra low-temperature polycrystalline silicon thin-film transistors

Hitoshi Ueno, Yuta Sugawara, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Ji Sim Jung, Kyung Bae Park, K. I.M. Jong Man, Jang Yeon Kwon, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We investigated the reliability of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by an ultra lowtemperature process below 200 °C. Their comparatively high reliability was confirmed. It was found by emission observation that hot carriers were hardly generated under the drain avalanche condition. The Joule heating effect was also hardly observed under DC stress at high drain and gate voltage stress. These results show that the hot carrier and Joule heating effects are not the predominant causes of the degradation of ultra low-temperature TFTs. The new degradation mode of the threshold voltage shift by a vertical electric field was found to be dominant in ultra low-temperature TFT.

Original language	English
Pages (from-to)	1303-1307
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	46
Issue number	3 B
DOIs	https://doi.org/10.1143/JJAP.46.1303
Publication status	Published - 2007 Mar 16

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Reliability analysis of ultra low-temperature polycrystalline silicon thin-film transistors",

abstract = "We investigated the reliability of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by an ultra lowtemperature process below 200 °C. Their comparatively high reliability was confirmed. It was found by emission observation that hot carriers were hardly generated under the drain avalanche condition. The Joule heating effect was also hardly observed under DC stress at high drain and gate voltage stress. These results show that the hot carrier and Joule heating effects are not the predominant causes of the degradation of ultra low-temperature TFTs. The new degradation mode of the threshold voltage shift by a vertical electric field was found to be dominant in ultra low-temperature TFT.",

author = "Hitoshi Ueno and Yuta Sugawara and Hiroshi Yano and Tomoaki Hatayama and Yukiharu Uraoka and Takashi Fuyuki and Jung, {Ji Sim} and Park, {Kyung Bae} and {Jong Man}, {K. I.M.} and Kwon, {Jang Yeon} and Takashi Noguchi",

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doi = "10.1143/JJAP.46.1303",

language = "English",

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T1 - Reliability analysis of ultra low-temperature polycrystalline silicon thin-film transistors

AU - Ueno, Hitoshi

AU - Sugawara, Yuta

AU - Yano, Hiroshi

AU - Hatayama, Tomoaki

AU - Uraoka, Yukiharu

AU - Fuyuki, Takashi

AU - Jung, Ji Sim

AU - Park, Kyung Bae

AU - Jong Man, K. I.M.

AU - Kwon, Jang Yeon

AU - Noguchi, Takashi

PY - 2007/3/16

Y1 - 2007/3/16

N2 - We investigated the reliability of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by an ultra lowtemperature process below 200 °C. Their comparatively high reliability was confirmed. It was found by emission observation that hot carriers were hardly generated under the drain avalanche condition. The Joule heating effect was also hardly observed under DC stress at high drain and gate voltage stress. These results show that the hot carrier and Joule heating effects are not the predominant causes of the degradation of ultra low-temperature TFTs. The new degradation mode of the threshold voltage shift by a vertical electric field was found to be dominant in ultra low-temperature TFT.

AB - We investigated the reliability of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by an ultra lowtemperature process below 200 °C. Their comparatively high reliability was confirmed. It was found by emission observation that hot carriers were hardly generated under the drain avalanche condition. The Joule heating effect was also hardly observed under DC stress at high drain and gate voltage stress. These results show that the hot carrier and Joule heating effects are not the predominant causes of the degradation of ultra low-temperature TFTs. The new degradation mode of the threshold voltage shift by a vertical electric field was found to be dominant in ultra low-temperature TFT.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

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ER -

Reliability analysis of ultra low-temperature polycrystalline silicon thin-film transistors

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