@inproceedings{835c8dcc7d2b48f8ad04a2b113010516,
title = "Relaxation of strained Si1-xGexby dry oxidation",
abstract = "We investigated strain changes in Si1-xGex layers on silicon substrates upon oxidation. We grew Si1-xGex layers with different Ge fractions (x = 0.15 and 0.3) on chemically cleaned silicon substrates by the UHV CVD process. Oxidation in a vertical furnace at 800 °C and 900 °C in an O2 gas ambient produced a silicon oxide layer and a silicon germanium layer that was richer in Ge-content than initial Si 1-xGex films. Initial compressively strained Si 1-xGex films are fully strained in this range of Ge fractions. The strain in the Ge-rich layer increased and then decreased as the oxidation temperature and time increased. In comparison, the strain of the remaining initial Si1-xGex gradually relaxed with an increase in oxidation time and temperature. The relaxation occurred through the generation of dislocations and defects at the interface of the Si (100) substrate.",
author = "Min, {B. G.} and Ko, {D. H.} and Cho, {M. H.} and Lee, {T. W.} and Choi, {K. J.}",
year = "2007",
doi = "10.1149/1.2727386",
language = "English",
isbn = "9781566775502",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "41--52",
booktitle = "ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS",
edition = "1",
note = "International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}