Relative activation energy for laser-induced crystallization of phase change materials

Taejin Park; Mann Ho Cho; Hyoungsub Kim

doi:10.7567/1347-4065/aaf059

Relative activation energy for laser-induced crystallization of phase change materials

Taejin Park, Mann Ho Cho, Hyoungsub Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The relative activation energy (E _a ^∗ ) derived from a pulsed laser-induced crystallization of phase change materials (PCMs) was suggested as a useful quantitative parameter to represent the practical switching speed, energy consumption, and storage reliability of phase change random access memory (PRAM). We employed the time-for-constant-fraction technique using the reflectivity change of PCMs and the irradiated laser power/pulse width. Using the suggested method, the E _a ^∗ values for the Ge ₂ Sb ₂ Te ₅ (GST), Bi-doped GST (5.9 at%), and Sn-doped GST (17.7 at%) films were determined to be 6.34 × 10 ^-9 , 4.56 × 10 ^-9 , and 3.77 × 10 ^-9 J, respectively, which reflected their expected device performances of PRAM.

Original language	English
Article number	018004
Journal	Japanese journal of applied physics
Volume	58
Issue number	1
DOIs	https://doi.org/10.7567/1347-4065/aaf059
Publication status	Published - 2019 Jan

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Publisher Copyright:
© 2019 The Japan Society of Applied Physics. © 2018 The Japan Society of Applied Physics.

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Physics and Astronomy(all)

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title = "Relative activation energy for laser-induced crystallization of phase change materials",

abstract = " The relative activation energy (E a ∗ ) derived from a pulsed laser-induced crystallization of phase change materials (PCMs) was suggested as a useful quantitative parameter to represent the practical switching speed, energy consumption, and storage reliability of phase change random access memory (PRAM). We employed the time-for-constant-fraction technique using the reflectivity change of PCMs and the irradiated laser power/pulse width. Using the suggested method, the E a ∗ values for the Ge 2 Sb 2 Te 5 (GST), Bi-doped GST (5.9 at%), and Sn-doped GST (17.7 at%) films were determined to be 6.34 × 10 -9 , 4.56 × 10 -9 , and 3.77 × 10 -9 J, respectively, which reflected their expected device performances of PRAM.",

author = "Taejin Park and Cho, {Mann Ho} and Hyoungsub Kim",

note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics. {\textcopyright} 2018 The Japan Society of Applied Physics.",

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doi = "10.7567/1347-4065/aaf059",

language = "English",

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AU - Park, Taejin

AU - Cho, Mann Ho

AU - Kim, Hyoungsub

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AB - The relative activation energy (E a ∗ ) derived from a pulsed laser-induced crystallization of phase change materials (PCMs) was suggested as a useful quantitative parameter to represent the practical switching speed, energy consumption, and storage reliability of phase change random access memory (PRAM). We employed the time-for-constant-fraction technique using the reflectivity change of PCMs and the irradiated laser power/pulse width. Using the suggested method, the E a ∗ values for the Ge 2 Sb 2 Te 5 (GST), Bi-doped GST (5.9 at%), and Sn-doped GST (17.7 at%) films were determined to be 6.34 × 10 -9 , 4.56 × 10 -9 , and 3.77 × 10 -9 J, respectively, which reflected their expected device performances of PRAM.

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Relative activation energy for laser-induced crystallization of phase change materials

Abstract

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