Relationship between resistive switching and Mott transition in atomic layer deposition prepared La2Ti2O7-x thin film

Yue Wang, Minjae Kim, Akendra Singh Chabungbam, Dong eun Kim, Qingyi Shao, Ioannis Kymissis, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

This study prepared Mott-metal state thin film La2Ti2O7-x on TiN substrate using atomic layer deposition, and confirmed W/La2Ti2O7-x/TiN clockwise forming-less resistive switching. The resistive switching mechanism was voltage-driven and oxygen vacancy doping-controlled Mott transition. Positive voltage induces the formation of oxygen vacancy in La2Ti2O7-x and change it from Mott-metal to Mott-insulator state, with the process reversible under negative voltage. We show that N doping can reduce the Ti3+ ratio in La2Ti2O7-x film, producing a weakly correlated system compared with La2Ti2O7-x film without N-doping. Nitrogen doping also increased resistive switching operation voltage and reduced La2Ti2O7-x film on/off ratio. Thus, La2Ti2O7-x, was a promising candidate for the fabrication of resistive switching device based on Mott transition.

Original languageEnglish
Article number115050
JournalScripta Materialia
Volume222
DOIs
Publication statusPublished - 2023 Jan 1

Bibliographical note

Publisher Copyright:
© 2022 Acta Materialia Inc.

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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