Reduction of ∙Si≡Si₃ defect density at the Si/SiO₂ interface by sol-gel SiO₂ thin film passivation

Chemistry

• Acid Catalyst 20%
• Catalyst 20%
• Chemical Passivation 100%
• Crystal Orientation 20%
• Dangling Bond 20%
• Doping Material 20%
• Ethanol 20%
• Interface Property 40%
• Liquid Film 20%
• Reaction Temperature 40%
• Reduction 20%
• Resistivity 40%
• Sol Gel Process 20%
• Surface 60%
• Volume 40%

Material Science

• Carrier Lifetime 100%
• Catalyst 20%
• Crystal Orientation 20%
• Defect 20%
• Defect Density 40%
• Doping (Additives) 20%
• Liquid Films 20%
• Sol-Gel 60%
• Surface 60%
• Tetraethyl Orthosilicate 80%
• Thin Films 60%