Reducing Rext in laser annealed enhancement-mode In 0.53Ga0.47as surface channel n-MOSFET

I. Ok; D. Veksler; P. Y. Hung; J. Oh; R. L. Moore; C. McDonough; R. E. Geer; C. K. Gaspe; M. B. Santos; G. Wong; P. Kirsch; H. H. Tseng; G. Bersuker; C. Hobbs; R. Jammy

doi:10.1109/VTSA.2010.5488957

Reducing R_ext in laser annealed enhancement-mode In _0.53Ga_0.47as surface channel n-MOSFET

I. Ok, D. Veksler, P. Y. Hung, J. Oh, R. L. Moore, C. McDonough, R. E. Geer, C. K. Gaspe, M. B. Santos, G. Wong, P. Kirsch, H. H. Tseng, G. Bersuker, C. Hobbs, R. Jammy

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

High mobility, narrow band gap group IV and III-V materials are strong contenders to replace strained-Si channels for logic applications beyond the 16 nm node [1-3]. While there are many research efforts evaluating III-V channels in HEMT and MOSFET forms, model based understanding and control of the FET properties such as channel mobility, series resistance, and off-state leakage are still lacking [4-8]. In this work, we address the aforementioned issues, by investigating laser annealing to control thermal budget and lower series resistance. Additionally we also report on preliminary material analysis and demonstrate the low temperature measurement to the performance of In _0.53Ga_0.47As MOSFETs. The electrical and material characteristics of TaN/ZrO₂/In_0.53Ga_0.47As self-aligned n-MOSFETs with high I_on/I_off (> 5×10⁴), high mobility (∼ 3000 cm/V•sec) and promise for low R_ext are presented and discussed.

Original language	English
Title of host publication	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Pages	38-39
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2010.5488957
Publication status	Published - 2010
Event	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan, Province of China Duration: 2010 Apr 26 → 2010 Apr 28

Publication series

Name	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Other

Other	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Country/Territory	Taiwan, Province of China
City	Hsin Chu
Period	10/4/26 → 10/4/28

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Hardware and Architecture

Access to Document

10.1109/VTSA.2010.5488957

Cite this

Ok, I., Veksler, D., Hung, P. Y., Oh, J., Moore, R. L., McDonough, C., Geer, R. E., Gaspe, C. K., Santos, M. B., Wong, G., Kirsch, P., Tseng, H. H., Bersuker, G., Hobbs, C., & Jammy, R. (2010). Reducing R_ext in laser annealed enhancement-mode In _0.53Ga_0.47as surface channel n-MOSFET. In Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 (pp. 38-39). [5488957] (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). https://doi.org/10.1109/VTSA.2010.5488957

@inproceedings{3d97e728894140e7b237824af376766a,

title = "Reducing Rext in laser annealed enhancement-mode In 0.53Ga0.47as surface channel n-MOSFET",

abstract = "High mobility, narrow band gap group IV and III-V materials are strong contenders to replace strained-Si channels for logic applications beyond the 16 nm node [1-3]. While there are many research efforts evaluating III-V channels in HEMT and MOSFET forms, model based understanding and control of the FET properties such as channel mobility, series resistance, and off-state leakage are still lacking [4-8]. In this work, we address the aforementioned issues, by investigating laser annealing to control thermal budget and lower series resistance. Additionally we also report on preliminary material analysis and demonstrate the low temperature measurement to the performance of In 0.53Ga0.47As MOSFETs. The electrical and material characteristics of TaN/ZrO2/In0.53Ga0.47As self-aligned n-MOSFETs with high Ion/Ioff (> 5×104), high mobility (∼ 3000 cm/V•sec) and promise for low Rext are presented and discussed.",

author = "I. Ok and D. Veksler and Hung, {P. Y.} and J. Oh and Moore, {R. L.} and C. McDonough and Geer, {R. E.} and Gaspe, {C. K.} and Santos, {M. B.} and G. Wong and P. Kirsch and Tseng, {H. H.} and G. Bersuker and C. Hobbs and R. Jammy",

year = "2010",

doi = "10.1109/VTSA.2010.5488957",

language = "English",

isbn = "9781424450633",

series = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",

pages = "38--39",

booktitle = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",

note = "2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 ; Conference date: 26-04-2010 Through 28-04-2010",

}

Ok, I, Veksler, D, Hung, PY, Oh, J, Moore, RL, McDonough, C, Geer, RE, Gaspe, CK, Santos, MB, Wong, G, Kirsch, P, Tseng, HH, Bersuker, G, Hobbs, C & Jammy, R 2010, Reducing R_ext in laser annealed enhancement-mode In _0.53Ga_0.47as surface channel n-MOSFET. in Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010., 5488957, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, pp. 38-39, 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, Hsin Chu, Taiwan, Province of China, 10/4/26. https://doi.org/10.1109/VTSA.2010.5488957

Reducing R_ext in laser annealed enhancement-mode In _0.53Ga_0.47as surface channel n-MOSFET. / Ok, I.; Veksler, D.; Hung, P. Y. et al.
Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 38-39 5488957 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Reducing Rext in laser annealed enhancement-mode In 0.53Ga0.47as surface channel n-MOSFET

AU - Ok, I.

AU - Veksler, D.

AU - Hung, P. Y.

AU - Oh, J.

AU - Moore, R. L.

AU - McDonough, C.

AU - Geer, R. E.

AU - Gaspe, C. K.

AU - Santos, M. B.

AU - Wong, G.

AU - Kirsch, P.

AU - Tseng, H. H.

AU - Bersuker, G.

AU - Hobbs, C.

AU - Jammy, R.

PY - 2010

Y1 - 2010

N2 - High mobility, narrow band gap group IV and III-V materials are strong contenders to replace strained-Si channels for logic applications beyond the 16 nm node [1-3]. While there are many research efforts evaluating III-V channels in HEMT and MOSFET forms, model based understanding and control of the FET properties such as channel mobility, series resistance, and off-state leakage are still lacking [4-8]. In this work, we address the aforementioned issues, by investigating laser annealing to control thermal budget and lower series resistance. Additionally we also report on preliminary material analysis and demonstrate the low temperature measurement to the performance of In 0.53Ga0.47As MOSFETs. The electrical and material characteristics of TaN/ZrO2/In0.53Ga0.47As self-aligned n-MOSFETs with high Ion/Ioff (> 5×104), high mobility (∼ 3000 cm/V•sec) and promise for low Rext are presented and discussed.

AB - High mobility, narrow band gap group IV and III-V materials are strong contenders to replace strained-Si channels for logic applications beyond the 16 nm node [1-3]. While there are many research efforts evaluating III-V channels in HEMT and MOSFET forms, model based understanding and control of the FET properties such as channel mobility, series resistance, and off-state leakage are still lacking [4-8]. In this work, we address the aforementioned issues, by investigating laser annealing to control thermal budget and lower series resistance. Additionally we also report on preliminary material analysis and demonstrate the low temperature measurement to the performance of In 0.53Ga0.47As MOSFETs. The electrical and material characteristics of TaN/ZrO2/In0.53Ga0.47As self-aligned n-MOSFETs with high Ion/Ioff (> 5×104), high mobility (∼ 3000 cm/V•sec) and promise for low Rext are presented and discussed.

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U2 - 10.1109/VTSA.2010.5488957

DO - 10.1109/VTSA.2010.5488957

M3 - Conference contribution

AN - SCOPUS:77957895496

SN - 9781424450633

T3 - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

SP - 38

EP - 39

BT - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

T2 - 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Y2 - 26 April 2010 through 28 April 2010

ER -

Ok I, Veksler D, Hung PY, Oh J, Moore RL, McDonough C et al. Reducing R_ext in laser annealed enhancement-mode In _0.53Ga_0.47as surface channel n-MOSFET. In Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 38-39. 5488957. (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). doi: 10.1109/VTSA.2010.5488957