Reducing contact resistance between Ni-InGaAs and n-In0.53Ga0.47as using sn interlayer in n-In0.53Ga0.47as MOSFETs

Meng Li, Geonho Shin, Jeongchan Lee, Seung Min Lee, Jungwoo Oh, Hi Deok Lee

Research output: Contribution to journalArticlepeer-review


Self-aligned Ni-InGaAs is a promising source/drain (S/D) contact for high-performance n-InGaAs metal-oxide semiconductor field-effect transistors. An Sn/Ni/TiN (5/15/10 nm) structure deposited by radio frequency sputtering is proposed to provide lower contact resistance at the S/D than the Ni/TiN structure. In the present study, after the formation of Ni-InGaAs by rapid thermal annealing, followed by the selective etching of the TiN capping layer and unreacted Ni, the extracted specific contact resistance was one order of magnitude lower than that of the Ni/TiN (15/10 nm) structure without the Sn interlayer. Furthermore, the Ni-InGaAs/n-In0.53Ga0.47As junction was well formed without penetration of Ni-InGaAs into the In0.53Ga0.47As substrate. Sn was found doped throughout the Ni-InGaAs layer to lead to a reduction of contact resistance.

Original languageEnglish
Pages (from-to)301-306
Number of pages6
JournalJournal of Semiconductor Technology and Science
Issue number3
Publication statusPublished - 2018 Jun

Bibliographical note

Funding Information:
This research was supported by the Ministry of Trade, Industry and Energy (MOTIE; 10048536) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. The authors thank the Daegu Centers of the Korea Basic Science Institute (KBSI) for the XRD analysis, and the National NanoFab Center (NNFC) in Daejeon for the SIMS analysis.

Publisher Copyright:
© 2018, Institute of Electronics Engineers of Korea. All rights reserved.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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