Recovery of remanent polarization of poly(vinylidene fluoride-co- trifluoroethylene) thin film after high temperature annealing using topographically nanostructured aluminium bottom electrode

Youn Jung Park; Seok Ju Kang; Cheolmin Park; Euntaek Woo; Kyusoon Shin; Kap Jin Kim

doi:10.1063/1.2743389

Recovery of remanent polarization of poly(vinylidene fluoride-co- trifluoroethylene) thin film after high temperature annealing using topographically nanostructured aluminium bottom electrode

Youn Jung Park, Seok Ju Kang, Cheolmin Park, Euntaek Woo, Kyusoon Shin, Kap Jin Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Facile recovery of ferroelectric polarization after high temperature annealing was observed in a poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin film on an etched Al bottom electrode which has a topographically nanostructured surface with hexagonal registry of the recessed hemispherical bowls of approximately 100 nm diameter. Fairly large remanent polarization of 10 μC cm2 was obtained after annealing up to 185 °C with the etched Al electrode, while the polarization rapidly dropped near the melting temperature of P(VDF-TrFE) (∼150 °C) with a flat Al electrode. The topographic electrode is found to facilitate the reorganization of P(VDF-TrFE) crystal under electric field.

Original language	English
Article number	222903
Journal	Applied Physics Letters
Volume	90
Issue number	22
DOIs	https://doi.org/10.1063/1.2743389
Publication status	Published - 2007

Bibliographical note

Funding Information:
This project was supported by The National Research Program for the 0.1 Terabit Non-Volatile Memory Development sponsored by Korea Commerce, Industry and Energy. Samsung Electronics, Co., Ltd. The x-ray experiments at PAL (4C2 beamline, Korea) were supported by MOST and POSCO, Korea. This work was supported by Seoul Science Foundation and the Second Stage of Brain Korea 21 Project in 2006.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2743389

Cite this

@article{400e30147a09467bbef8aa7b08104634,

title = "Recovery of remanent polarization of poly(vinylidene fluoride-co- trifluoroethylene) thin film after high temperature annealing using topographically nanostructured aluminium bottom electrode",

abstract = "Facile recovery of ferroelectric polarization after high temperature annealing was observed in a poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin film on an etched Al bottom electrode which has a topographically nanostructured surface with hexagonal registry of the recessed hemispherical bowls of approximately 100 nm diameter. Fairly large remanent polarization of 10 μC cm2 was obtained after annealing up to 185 °C with the etched Al electrode, while the polarization rapidly dropped near the melting temperature of P(VDF-TrFE) (∼150 °C) with a flat Al electrode. The topographic electrode is found to facilitate the reorganization of P(VDF-TrFE) crystal under electric field.",

author = "Park, {Youn Jung} and Kang, {Seok Ju} and Cheolmin Park and Euntaek Woo and Kyusoon Shin and Kim, {Kap Jin}",

note = "Funding Information: This project was supported by The National Research Program for the 0.1 Terabit Non-Volatile Memory Development sponsored by Korea Commerce, Industry and Energy. Samsung Electronics, Co., Ltd. The x-ray experiments at PAL (4C2 beamline, Korea) were supported by MOST and POSCO, Korea. This work was supported by Seoul Science Foundation and the Second Stage of Brain Korea 21 Project in 2006.",

year = "2007",

doi = "10.1063/1.2743389",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

Recovery of remanent polarization of poly(vinylidene fluoride-co- trifluoroethylene) thin film after high temperature annealing using topographically nanostructured aluminium bottom electrode. / Park, Youn Jung; Kang, Seok Ju; Park, Cheolmin et al.
In: Applied Physics Letters, Vol. 90, No. 22, 222903, 2007.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Recovery of remanent polarization of poly(vinylidene fluoride-co- trifluoroethylene) thin film after high temperature annealing using topographically nanostructured aluminium bottom electrode

AU - Park, Youn Jung

AU - Kang, Seok Ju

AU - Park, Cheolmin

AU - Woo, Euntaek

AU - Shin, Kyusoon

AU - Kim, Kap Jin

N1 - Funding Information: This project was supported by The National Research Program for the 0.1 Terabit Non-Volatile Memory Development sponsored by Korea Commerce, Industry and Energy. Samsung Electronics, Co., Ltd. The x-ray experiments at PAL (4C2 beamline, Korea) were supported by MOST and POSCO, Korea. This work was supported by Seoul Science Foundation and the Second Stage of Brain Korea 21 Project in 2006.

PY - 2007

Y1 - 2007

N2 - Facile recovery of ferroelectric polarization after high temperature annealing was observed in a poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin film on an etched Al bottom electrode which has a topographically nanostructured surface with hexagonal registry of the recessed hemispherical bowls of approximately 100 nm diameter. Fairly large remanent polarization of 10 μC cm2 was obtained after annealing up to 185 °C with the etched Al electrode, while the polarization rapidly dropped near the melting temperature of P(VDF-TrFE) (∼150 °C) with a flat Al electrode. The topographic electrode is found to facilitate the reorganization of P(VDF-TrFE) crystal under electric field.

AB - Facile recovery of ferroelectric polarization after high temperature annealing was observed in a poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin film on an etched Al bottom electrode which has a topographically nanostructured surface with hexagonal registry of the recessed hemispherical bowls of approximately 100 nm diameter. Fairly large remanent polarization of 10 μC cm2 was obtained after annealing up to 185 °C with the etched Al electrode, while the polarization rapidly dropped near the melting temperature of P(VDF-TrFE) (∼150 °C) with a flat Al electrode. The topographic electrode is found to facilitate the reorganization of P(VDF-TrFE) crystal under electric field.

UR - http://www.scopus.com/inward/record.url?scp=34249886783&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249886783&partnerID=8YFLogxK

U2 - 10.1063/1.2743389

DO - 10.1063/1.2743389

M3 - Article

AN - SCOPUS:34249886783

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222903

ER -

Recovery of remanent polarization of poly(vinylidene fluoride-co- trifluoroethylene) thin film after high temperature annealing using topographically nanostructured aluminium bottom electrode

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this