Realization of Enhanced Long-Term Visual Memory for Indium–Gallium–Zinc Oxide-Based Optical Synaptic Transistor

Dongwoo Kim; Won Kyung Min; Hyung Tae Kim; Jusung Chung; Min Seong Kim; Hyun Jae Kim

doi:10.1002/adom.202200558

Realization of Enhanced Long-Term Visual Memory for Indium–Gallium–Zinc Oxide-Based Optical Synaptic Transistor

Dongwoo Kim, Won Kyung Min, Hyung Tae Kim, Jusung Chung, Min Seong Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Amorphous indium–gallium–zinc oxide (IGZO)-based optical synaptic transistor using visible light as the signal that shows a clear difference between long-term memory (LTM) and short-term memory (STM) is introduced in this study. However, since oxide semiconductors, including IGZO, do not sense visible light due to their high band gap energy of around 3.0 eV, defects are generated intentionally within IGZO channel layer to enable sensitivity to the visible light by inserting two layers of mesh-structured titanium dioxide (m-TiO₂) inside the channel layer. Additionally, a layer of thin film-structured hafnium dioxide (HfO₂) is inserted inside the channel to increase the persistent photoconductivity (PPC) effect. This increased PPC effect causes the device to maintain the current long after the light signal is removed. Therefore, the average difference between LTM and STM is achieved ≈110 times, showing a clear difference between LTM and STM. Additionally, 721% of maximum paired-pulse facilitation (PPF) is achieved. Thus, the device introduced in this study is believed to lead the coming technology such as interactive appliances including displays and robots.

Original language	English
Article number	2200558
Journal	Advanced Optical Materials
Volume	10
Issue number	15
DOIs	https://doi.org/10.1002/adom.202200558
Publication status	Published - 2022 Aug 4

Bibliographical note

Funding Information:
This work was supported by the Technology Innovation Program (20010371, development of 4K level flexible display device and panel technology by inkjet pixel printing method) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).

Publisher Copyright:
© 2022 Wiley-VCH GmbH.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1002/adom.202200558

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title = "Realization of Enhanced Long-Term Visual Memory for Indium–Gallium–Zinc Oxide-Based Optical Synaptic Transistor",

abstract = "Amorphous indium–gallium–zinc oxide (IGZO)-based optical synaptic transistor using visible light as the signal that shows a clear difference between long-term memory (LTM) and short-term memory (STM) is introduced in this study. However, since oxide semiconductors, including IGZO, do not sense visible light due to their high band gap energy of around 3.0 eV, defects are generated intentionally within IGZO channel layer to enable sensitivity to the visible light by inserting two layers of mesh-structured titanium dioxide (m-TiO2) inside the channel layer. Additionally, a layer of thin film-structured hafnium dioxide (HfO2) is inserted inside the channel to increase the persistent photoconductivity (PPC) effect. This increased PPC effect causes the device to maintain the current long after the light signal is removed. Therefore, the average difference between LTM and STM is achieved ≈110 times, showing a clear difference between LTM and STM. Additionally, 721% of maximum paired-pulse facilitation (PPF) is achieved. Thus, the device introduced in this study is believed to lead the coming technology such as interactive appliances including displays and robots.",

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AU - Kim, Min Seong

AU - Kim, Hyun Jae

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N2 - Amorphous indium–gallium–zinc oxide (IGZO)-based optical synaptic transistor using visible light as the signal that shows a clear difference between long-term memory (LTM) and short-term memory (STM) is introduced in this study. However, since oxide semiconductors, including IGZO, do not sense visible light due to their high band gap energy of around 3.0 eV, defects are generated intentionally within IGZO channel layer to enable sensitivity to the visible light by inserting two layers of mesh-structured titanium dioxide (m-TiO2) inside the channel layer. Additionally, a layer of thin film-structured hafnium dioxide (HfO2) is inserted inside the channel to increase the persistent photoconductivity (PPC) effect. This increased PPC effect causes the device to maintain the current long after the light signal is removed. Therefore, the average difference between LTM and STM is achieved ≈110 times, showing a clear difference between LTM and STM. Additionally, 721% of maximum paired-pulse facilitation (PPF) is achieved. Thus, the device introduced in this study is believed to lead the coming technology such as interactive appliances including displays and robots.

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Realization of Enhanced Long-Term Visual Memory for Indium–Gallium–Zinc Oxide-Based Optical Synaptic Transistor

Abstract

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