Real-Time Plasma Uniformity Measurement Technique Using Optical Emission Spectroscopy with Revolving Module

In Joong Kim; Ilgu Yun

doi:10.1109/JSEN.2018.2885349

Real-Time Plasma Uniformity Measurement Technique Using Optical Emission Spectroscopy with Revolving Module

In Joong Kim, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A measurement technique for analyzing real-time plasma abnormality using optical emission spectroscopy (OES) is proposed to detect process uniformity during semiconductor processing. Among many measurement techniques, OES is a non-contact plasma measurement system for detecting process end points and plasma abnormality without influencing the process. Thus, this system can be widely used and utilized essentially in almost all tools for plasma processing. Despite easy installation and high utilization in plasma manufacturing tools, most OES systems are not able to detect real-time plasma uniformity. Therefore, the improved OES systems are required to overcome the limitations. In this paper, the measurement technique of the plasma light intensity in the left and right sides of a process chamber by a revolving module adapted to conventional OES in real time is investigated. This technique can be used to measure the plasma light in specific regions in the process chamber and detect real-time plasma process abnormalities by comparing light intensities from different regions.

Original language	English
Article number	8565991
Pages (from-to)	2356-2361
Number of pages	6
Journal	IEEE Sensors Journal
Volume	19
Issue number	6
DOIs	https://doi.org/10.1109/JSEN.2018.2885349
Publication status	Published - 2019 Mar 15

Bibliographical note

Funding Information:
Manuscript received August 16, 2018; revised November 25, 2018; accepted November 29, 2018. Date of publication December 6, 2018; date of current version February 15, 2019. This work was supported by the Joint Program for Samsung Electronics-Yonsei University. The associate editor coordinating the review of this paper and approving it for publication was Dr. Ioannis Raptis. (Corresponding author: Ilgu Yun.) The authors are with the Department of Electrical Engineering, Yonsei University, Seoul 120-749, South Korea (e-mail: kiminjoong@yonsei.ac.kr; iyun@yonsei.ac.kr). Digital Object Identifier 10.1109/JSEN.2018.2885349

Publisher Copyright:
© 2001-2012 IEEE.

All Science Journal Classification (ASJC) codes

Instrumentation
Electrical and Electronic Engineering

Access to Document

10.1109/JSEN.2018.2885349

Cite this

@article{ffda838905d34cdcbbc6f40e6efa0808,

title = "Real-Time Plasma Uniformity Measurement Technique Using Optical Emission Spectroscopy with Revolving Module",

abstract = "A measurement technique for analyzing real-time plasma abnormality using optical emission spectroscopy (OES) is proposed to detect process uniformity during semiconductor processing. Among many measurement techniques, OES is a non-contact plasma measurement system for detecting process end points and plasma abnormality without influencing the process. Thus, this system can be widely used and utilized essentially in almost all tools for plasma processing. Despite easy installation and high utilization in plasma manufacturing tools, most OES systems are not able to detect real-time plasma uniformity. Therefore, the improved OES systems are required to overcome the limitations. In this paper, the measurement technique of the plasma light intensity in the left and right sides of a process chamber by a revolving module adapted to conventional OES in real time is investigated. This technique can be used to measure the plasma light in specific regions in the process chamber and detect real-time plasma process abnormalities by comparing light intensities from different regions.",

author = "Kim, {In Joong} and Ilgu Yun",

note = "Funding Information: Manuscript received August 16, 2018; revised November 25, 2018; accepted November 29, 2018. Date of publication December 6, 2018; date of current version February 15, 2019. This work was supported by the Joint Program for Samsung Electronics-Yonsei University. The associate editor coordinating the review of this paper and approving it for publication was Dr. Ioannis Raptis. (Corresponding author: Ilgu Yun.) The authors are with the Department of Electrical Engineering, Yonsei University, Seoul 120-749, South Korea (e-mail: kiminjoong@yonsei.ac.kr; iyun@yonsei.ac.kr). Digital Object Identifier 10.1109/JSEN.2018.2885349 Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",

year = "2019",

month = mar,

day = "15",

doi = "10.1109/JSEN.2018.2885349",

language = "English",

volume = "19",

pages = "2356--2361",

journal = "IEEE Sensors Journal",

issn = "1530-437X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Real-Time Plasma Uniformity Measurement Technique Using Optical Emission Spectroscopy with Revolving Module

AU - Kim, In Joong

AU - Yun, Ilgu

N1 - Funding Information: Manuscript received August 16, 2018; revised November 25, 2018; accepted November 29, 2018. Date of publication December 6, 2018; date of current version February 15, 2019. This work was supported by the Joint Program for Samsung Electronics-Yonsei University. The associate editor coordinating the review of this paper and approving it for publication was Dr. Ioannis Raptis. (Corresponding author: Ilgu Yun.) The authors are with the Department of Electrical Engineering, Yonsei University, Seoul 120-749, South Korea (e-mail: kiminjoong@yonsei.ac.kr; iyun@yonsei.ac.kr). Digital Object Identifier 10.1109/JSEN.2018.2885349 Publisher Copyright: © 2001-2012 IEEE.

PY - 2019/3/15

Y1 - 2019/3/15

N2 - A measurement technique for analyzing real-time plasma abnormality using optical emission spectroscopy (OES) is proposed to detect process uniformity during semiconductor processing. Among many measurement techniques, OES is a non-contact plasma measurement system for detecting process end points and plasma abnormality without influencing the process. Thus, this system can be widely used and utilized essentially in almost all tools for plasma processing. Despite easy installation and high utilization in plasma manufacturing tools, most OES systems are not able to detect real-time plasma uniformity. Therefore, the improved OES systems are required to overcome the limitations. In this paper, the measurement technique of the plasma light intensity in the left and right sides of a process chamber by a revolving module adapted to conventional OES in real time is investigated. This technique can be used to measure the plasma light in specific regions in the process chamber and detect real-time plasma process abnormalities by comparing light intensities from different regions.

AB - A measurement technique for analyzing real-time plasma abnormality using optical emission spectroscopy (OES) is proposed to detect process uniformity during semiconductor processing. Among many measurement techniques, OES is a non-contact plasma measurement system for detecting process end points and plasma abnormality without influencing the process. Thus, this system can be widely used and utilized essentially in almost all tools for plasma processing. Despite easy installation and high utilization in plasma manufacturing tools, most OES systems are not able to detect real-time plasma uniformity. Therefore, the improved OES systems are required to overcome the limitations. In this paper, the measurement technique of the plasma light intensity in the left and right sides of a process chamber by a revolving module adapted to conventional OES in real time is investigated. This technique can be used to measure the plasma light in specific regions in the process chamber and detect real-time plasma process abnormalities by comparing light intensities from different regions.

UR - http://www.scopus.com/inward/record.url?scp=85058093294&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85058093294&partnerID=8YFLogxK

U2 - 10.1109/JSEN.2018.2885349

DO - 10.1109/JSEN.2018.2885349

M3 - Article

AN - SCOPUS:85058093294

SN - 1530-437X

VL - 19

SP - 2356

EP - 2361

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 6

M1 - 8565991

ER -

Real-Time Plasma Uniformity Measurement Technique Using Optical Emission Spectroscopy with Revolving Module

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this