Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Min Kim, Gun Hwan Kim, Min Hwan Lee, Cheol Seong Hwang

Research output: Contribution to journalArticlepeer-review

68 Citations (Scopus)


Unipolar resistance switching (RS) in TiO2 thin films originates from the repeated formation and rupture of the Magnéli phase conducting filaments through repeated nano-scale phase transitions. By applying the Johnson-Mehl-Avrami (JMA) type kinetic model to the careful analysis on the evolution of transient current in a pulse-switching, it was possible to elucidate the material specific evolution of the Magnéli phase filament. This methodology was applied to the two types of TiO2 films grown by plasma-enhanced atomic layer deposition (PEALD) and sputtering. These two samples have structurally and electrically distinctive properties: PEALD film exhibited high variability in switching parameters and required an electroforming while sputtered film showed higher uniformity without distinct electroforming process. The JMA-type kinetic analysis of the RS behaviors revealed that the rejuvenation of the filament is accomplished by repeated one-dimensional nucleation followed by a two-dimensional growth in PEALD samples, whereas one-dimensional nucleation-free mechanism dominates in sputtered films.

Original languageEnglish
Article number3443
JournalScientific reports
Publication statusPublished - 2013 Dec 6

Bibliographical note

Funding Information:
This study was supported by the Global Research Laboratory program (2012040157) through the National Research Foundation (NRF) of Korea.

All Science Journal Classification (ASJC) codes

  • General


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