Reaction of Co and capping layers and its effect on CoSi2 formation in Si/SiOx/Co system

Gi Bum Kim; Joon Seop Kwak; Hong Koo Baik; Sung Man Lee; Sang Ho Oh; Chan Gyung Park

doi:10.1063/1.1290689

Reaction of Co and capping layers and its effect on CoSi₂ formation in Si/SiO_x/Co system

Gi Bum Kim, Joon Seop Kwak, Hong Koo Baik, Sung Man Lee, Sang Ho Oh, Chan Gyung Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The role of the reaction between the capping layer and Co on the crystalline nature of CoSi₂ films in refractory metal-capped Si/SiO_x/Co system has been investigated. The epitaxial CoSi₂ film was obtained in the capping layers (Ti, Zr) with high tendency of mixing between Co and the capping layer. Amorphous Ti-Co layer was produced at 450°C, and its thickness was increased at 550°C. The formation of amorphous Ti-Co layer during low-temperature annealing may be responsible for the formation of epitaxial CoSi₂. Meanwhile, the polycrystalline CoSi₂ was formed in the capping layer (Cr, Mo) with low tendency of mixing. These results can be explained by the fact that the mixing layer formed from the reaction between Co and refractory metal control the Co diffusion to the Si substrate as well as the thin SiO_x between Co and Si.

Original language	English
Pages (from-to)	1443-1445
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	10
DOIs	https://doi.org/10.1063/1.1290689
Publication status	Published - 2000 Sept 4

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1290689

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@article{449015de93de4f34934dbbcbef817cf6,

title = "Reaction of Co and capping layers and its effect on CoSi2 formation in Si/SiOx/Co system",

abstract = "The role of the reaction between the capping layer and Co on the crystalline nature of CoSi2 films in refractory metal-capped Si/SiOx/Co system has been investigated. The epitaxial CoSi2 film was obtained in the capping layers (Ti, Zr) with high tendency of mixing between Co and the capping layer. Amorphous Ti-Co layer was produced at 450°C, and its thickness was increased at 550°C. The formation of amorphous Ti-Co layer during low-temperature annealing may be responsible for the formation of epitaxial CoSi2. Meanwhile, the polycrystalline CoSi2 was formed in the capping layer (Cr, Mo) with low tendency of mixing. These results can be explained by the fact that the mixing layer formed from the reaction between Co and refractory metal control the Co diffusion to the Si substrate as well as the thin SiOx between Co and Si.",

author = "Kim, {Gi Bum} and Kwak, {Joon Seop} and Baik, {Hong Koo} and Lee, {Sung Man} and Oh, {Sang Ho} and Park, {Chan Gyung}",

year = "2000",

month = sep,

day = "4",

doi = "10.1063/1.1290689",

language = "English",

volume = "77",

pages = "1443--1445",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Reaction of Co and capping layers and its effect on CoSi2 formation in Si/SiOx/Co system

AU - Kim, Gi Bum

AU - Kwak, Joon Seop

AU - Baik, Hong Koo

AU - Lee, Sung Man

AU - Oh, Sang Ho

AU - Park, Chan Gyung

PY - 2000/9/4

Y1 - 2000/9/4

N2 - The role of the reaction between the capping layer and Co on the crystalline nature of CoSi2 films in refractory metal-capped Si/SiOx/Co system has been investigated. The epitaxial CoSi2 film was obtained in the capping layers (Ti, Zr) with high tendency of mixing between Co and the capping layer. Amorphous Ti-Co layer was produced at 450°C, and its thickness was increased at 550°C. The formation of amorphous Ti-Co layer during low-temperature annealing may be responsible for the formation of epitaxial CoSi2. Meanwhile, the polycrystalline CoSi2 was formed in the capping layer (Cr, Mo) with low tendency of mixing. These results can be explained by the fact that the mixing layer formed from the reaction between Co and refractory metal control the Co diffusion to the Si substrate as well as the thin SiOx between Co and Si.

AB - The role of the reaction between the capping layer and Co on the crystalline nature of CoSi2 films in refractory metal-capped Si/SiOx/Co system has been investigated. The epitaxial CoSi2 film was obtained in the capping layers (Ti, Zr) with high tendency of mixing between Co and the capping layer. Amorphous Ti-Co layer was produced at 450°C, and its thickness was increased at 550°C. The formation of amorphous Ti-Co layer during low-temperature annealing may be responsible for the formation of epitaxial CoSi2. Meanwhile, the polycrystalline CoSi2 was formed in the capping layer (Cr, Mo) with low tendency of mixing. These results can be explained by the fact that the mixing layer formed from the reaction between Co and refractory metal control the Co diffusion to the Si substrate as well as the thin SiOx between Co and Si.

UR - http://www.scopus.com/inward/record.url?scp=0000430785&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000430785&partnerID=8YFLogxK

U2 - 10.1063/1.1290689

DO - 10.1063/1.1290689

M3 - Article

AN - SCOPUS:0000430785

SN - 0003-6951

VL - 77

SP - 1443

EP - 1445

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Reaction of Co and capping layers and its effect on CoSi₂ formation in Si/SiO_x/Co system

Abstract

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