Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns

Seunggi Seo, Byung Chul Yeo, Sang Soo Han, Chang Mo Yoon, Joon Young Yang, Jonggeun Yoon, Choongkeun Yoo, Ho Jin Kim, Yong Baek Lee, Su Jeong Lee, Jae Min Myoung, Han Bo Ram Lee, Woo Hee Kim, Il Kwon Oh, Hyungjun Kim

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68 Citations (Scopus)


The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block Al2O3 film formation. However, Al2O3 layers began to form on the ODPA SAMs after several cycles, despite reports that CH3-terminated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD Al2O3 process with high selectivity, which produces films of ∼60 nm thickness over 370 cycles. The successful deposition of Al2O3 thin film patterns using this process is a breakthrough technique in the field of nanotechnology.

Original languageEnglish
Pages (from-to)41607-41617
Number of pages11
JournalACS Applied Materials and Interfaces
Issue number47
Publication statusPublished - 2017 Nov 29

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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