It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.
Bibliographical noteFunding Information:
This work was supported by the electron Spin Science Center at POSTECH and also partially supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology and KIST Vision21 program.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics