Quenching of tunneling magnetoresistance at low temperatures

K. I. Lee; J. H. Lee; W. Y. Lee; K. H. Shin; H. C. Ri; B. C. Lee; K. Rhie

doi:10.1016/j.jmmm.2003.12.282

Quenching of tunneling magnetoresistance at low temperatures

K. I. Lee, J. H. Lee, W. Y. Lee, K. H. Shin, H. C. Ri, B. C. Lee, K. Rhie

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.

Original language	English
Pages (from-to)	e1493-e1494
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.282
Publication status	Published - 2004 May

Bibliographical note

Funding Information:
This work was supported by the electron Spin Science Center at POSTECH and also partially supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology and KIST Vision21 program.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2003.12.282

Cite this

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title = "Quenching of tunneling magnetoresistance at low temperatures",

abstract = "It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.",

author = "Lee, {K. I.} and Lee, {J. H.} and Lee, {W. Y.} and Shin, {K. H.} and Ri, {H. C.} and Lee, {B. C.} and K. Rhie",

note = "Funding Information: This work was supported by the electron Spin Science Center at POSTECH and also partially supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology and KIST Vision21 program.",

year = "2004",

month = may,

doi = "10.1016/j.jmmm.2003.12.282",

language = "English",

volume = "272-276",

pages = "e1493--e1494",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

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TY - JOUR

T1 - Quenching of tunneling magnetoresistance at low temperatures

AU - Lee, K. I.

AU - Lee, J. H.

AU - Lee, W. Y.

AU - Shin, K. H.

AU - Ri, H. C.

AU - Lee, B. C.

AU - Rhie, K.

N1 - Funding Information: This work was supported by the electron Spin Science Center at POSTECH and also partially supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology and KIST Vision21 program.

PY - 2004/5

Y1 - 2004/5

N2 - It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.

AB - It was observed that the tunneling magnetoresistance (TMR) was quenched at low temperatures for magnetic tunnel junctions fabricated with high-energy oxidation power. The unusual temperature dependence of the TMR is attributed to the spin-flip scattering at the interface.

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U2 - 10.1016/j.jmmm.2003.12.282

DO - 10.1016/j.jmmm.2003.12.282

M3 - Article

AN - SCOPUS:23144457403

SN - 0304-8853

VL - 272-276

SP - e1493-e1494

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - SUPPL. 1

ER -

Quenching of tunneling magnetoresistance at low temperatures

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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