Quenching effects on the solution-processed In-Ga-Zn-O system

Doo Hyun Yoon; Si Joon Kim; Dong Lim Kim; Seung Jin Heo; Hyun Jae Kim

doi:10.1149/1.3605310

Quenching effects on the solution-processed In-Ga-Zn-O system

Doo Hyun Yoon, Si Joon Kim, Dong Lim Kim, Seung Jin Heo, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We investigated quenching effects in solution-processed In-Ga-Zn-O (IGZO). Improved conductivity and crystallinity degradation occurred in quenched IGZO thin-films because of oxygen vacancy generation in a nominal stoichiometric system via defect formation resulting from temperature variation. The optical bandgap was red-shifted in quenched IGZO thin-films due to fluctuations in ionized impurities, such as In⁴, Ga³, and Zn², leading to band tailing. Fourier-transform infrared spectra confirmed that quenching effect by liquid nitrogen treatment resulted only from rapid decrement of temperature because there is no generation of chemical bonds during the soaking.

Original language	English
Pages (from-to)	E28-E30
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	9
DOIs	https://doi.org/10.1149/1.3605310
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3605310

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abstract = "We investigated quenching effects in solution-processed In-Ga-Zn-O (IGZO). Improved conductivity and crystallinity degradation occurred in quenched IGZO thin-films because of oxygen vacancy generation in a nominal stoichiometric system via defect formation resulting from temperature variation. The optical bandgap was red-shifted in quenched IGZO thin-films due to fluctuations in ionized impurities, such as In4, Ga3, and Zn2, leading to band tailing. Fourier-transform infrared spectra confirmed that quenching effect by liquid nitrogen treatment resulted only from rapid decrement of temperature because there is no generation of chemical bonds during the soaking.",

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AU - Yoon, Doo Hyun

AU - Kim, Si Joon

AU - Kim, Dong Lim

AU - Jin Heo, Seung

AU - Kim, Hyun Jae

PY - 2011

Y1 - 2011

N2 - We investigated quenching effects in solution-processed In-Ga-Zn-O (IGZO). Improved conductivity and crystallinity degradation occurred in quenched IGZO thin-films because of oxygen vacancy generation in a nominal stoichiometric system via defect formation resulting from temperature variation. The optical bandgap was red-shifted in quenched IGZO thin-films due to fluctuations in ionized impurities, such as In4, Ga3, and Zn2, leading to band tailing. Fourier-transform infrared spectra confirmed that quenching effect by liquid nitrogen treatment resulted only from rapid decrement of temperature because there is no generation of chemical bonds during the soaking.

AB - We investigated quenching effects in solution-processed In-Ga-Zn-O (IGZO). Improved conductivity and crystallinity degradation occurred in quenched IGZO thin-films because of oxygen vacancy generation in a nominal stoichiometric system via defect formation resulting from temperature variation. The optical bandgap was red-shifted in quenched IGZO thin-films due to fluctuations in ionized impurities, such as In4, Ga3, and Zn2, leading to band tailing. Fourier-transform infrared spectra confirmed that quenching effect by liquid nitrogen treatment resulted only from rapid decrement of temperature because there is no generation of chemical bonds during the soaking.

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JO - Electrochemical and Solid-State Letters

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Quenching effects on the solution-processed In-Ga-Zn-O system

Abstract

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