Quaternary NAND Logic and Complementary Ternary Inverter with p-MoTe2/n-MoS2 Heterostack Channel Transistors

Sam Park, Han Joo Lee, Wonjun Choi, Hye Jin Jin, Hyunmin Cho, Yeonsu Jeong, Sol Lee, Kwanpyo Kim, Seongil Im

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Applications of 2D semiconductors have been extensively studied, much oriented to various electron devices. Recently, multivalue field-effect transistors (FETs) are also included among 2D-based electron device studies in consideration that multivalue FETs may resolve power consumption issues in future integrated circuits. Several n-channel devices are thus reported along with a few p-channel devices, while studies to achieve both n- and p-channel multivalue FETs are hardly found. Here, both n- and p-channel multivalue FETs are fabricated using p-MoTe2/n-MoS2 heterostack channel architecture, where either p- or n-channel ternary value FET is reproducible by switching the stacking order of p- and n-channel layer. The main ternary value mechanism originates from resonant tunneling type injection and channel inversion, which take place during device operation. For a state-of-the-art device application in 2D electronics, a quaternary NAND logic circuit is for the first time demonstrated by integrating two ternary n-channel FETs, and a complementary ternary inverter is also fabricated by integrating multivalue p-channel and plain n-channel FET.

Original languageEnglish
Article number2108737
JournalAdvanced Functional Materials
Volume32
Issue number13
DOIs
Publication statusPublished - 2022 Mar 23

Bibliographical note

Publisher Copyright:
© 2021 Wiley-VCH GmbH

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics

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