Quasicrystalline phase-change memory

Eun Sung Lee, Joung E. Yoo, Du S. Yoon, Sung D. Kim, Yongjoo Kim, Soobin Hwang, Dasol Kim, Hyeong Chai Jeong, Won T. Kim, Hye J. Chang, Hoyoung Suh, Dae Hong Ko, Choonghee Cho, Yongjoon Choi, Do H. Kim, Mann Ho Cho

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2 Citations (Scopus)


Phase-change memory utilizing amorphous-to-crystalline phase-change processes for reset-to-set operation as a nonvolatile memory has been recently commercialized as a storage class memory. Unfortunately, designing new phase-change materials (PCMs) with low phase-change energy and sufficient thermal stability is difficult because phase-change energy and thermal stability decrease simultaneously as the amorphous phase destabilizes. This issue arising from the trade-off relationship between stability and energy consumption can be solved by reducing the entropic loss of phase-change energy as apparent in crystalline-to-crystalline phase-change process of a GeTe/Sb2Te3 superlattice structure. A paradigm shift in atomic crystallography has been recently produced using a quasi-crystal, which is a new type of atomic ordering symmetry without any linear translational symmetry. This paper introduces a novel class of PCMs based on a quasicrystalline-to-approximant crystalline phase-change process, whose phase-change energy and thermal stability are simultaneously enhanced compared to those of the GeTe/Sb2Te3 superlattice structure. This report includes a new concept that reduces entropic loss using a quasicrystalline state and takes the first step in the development of new PCMs with significantly low phase-change energy and considerably high thermal stability.

Original languageEnglish
Article number13673
JournalScientific reports
Issue number1
Publication statusPublished - 2020 Dec 1

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© 2020, The Author(s).

All Science Journal Classification (ASJC) codes

  • General


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