Quantitative evaluation for effective removal of phosphorus for SoG-Si

Eun Jin Jung, Byung Moon Moon, Dong Joon Min

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


Production of solar cells has increased rapidly in recent years, and metallurgical production of solar grade silicon (SoG-Si), has increased compared with more expensive processes such as Siemens process and Cz processes. It is important to understand the thermodynamic behavior of phosphorus in slag for optimized refinement of SoG-Si. In this study, the thermodynamic behavior of phosphorus in the CaOSiO2CaF2 slag system was investigated at 1773 K for various oxygen potential and slag composition. In addition, evaporation of phosphorus in the reduction process was observed during slag refining by addition of H2 gas. Experimental results showed that the stability of phosphorus in slag depends on both the O2-(basicity) content of the slag and the solubility of Ca in silicon, and the dissolution mechanism of phosphorus into slag was derived. Results confirmed that phosphorus and calcium in molten silicon were also removed by acid leaching. The effective removal of phosphorus for SoG-Si using several refining processes was evaluated quantitatively.

Original languageEnglish
Pages (from-to)1779-1784
Number of pages6
JournalSolar Energy Materials and Solar Cells
Issue number7
Publication statusPublished - 2011 Jul

Bibliographical note

Funding Information:
This work was supported by the “Brain Korea 21 (BK 21) Project” and the New and Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean Government Ministry of Knowledge Economy .

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films


Dive into the research topics of 'Quantitative evaluation for effective removal of phosphorus for SoG-Si'. Together they form a unique fingerprint.

Cite this