Purification and particle size control of b-SiC powder using thermocycling process

E. J. Jung, Y. J. Lee, S. R. Kim, W. T. Kwon, D. J. Choi, Y. Kim

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8 Citations (Scopus)


Recently, SiC single crystal growth has been of interest for the development of an alternative semiconducting material. The aim of this study was to purify and grow b-SiC particles for use as a single crystal source. First, a β-SiC powder with a particle size of about 10 mm and a purity of 99?5% was prepared from a phenyl-containing silica sol. Then, three different of heat treatment process were applied to grow the β-SiC particles and evaluate the effects of heat-treatment time and temperature. After three thermocycling processes carried out from 1850 to 2000°C in 1 h, the b-SiC particles had diameters over 100 mm because of a vaporisation-recrystallisation process that accelerated the b-SiC particle growth. Moreover, the thermocycling process improved the purity of b-SiC by eliminating metallic impurities.

Original languageEnglish
Pages (from-to)352-357
Number of pages6
JournalAdvances in Applied Ceramics
Issue number6
Publication statusPublished - 2014 Aug

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Industrial and Manufacturing Engineering


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