Pulsed laser deposition of ZnO thin films for applications of light emission

Sang Hyuck Bae, Sang Yeol Lee, Beom Jun Jin, Seongil Im

Research output: Contribution to journalConference articlepeer-review

72 Citations (Scopus)


ZnO is a material suitable for light emission. In order to investigate the light emission properties, ZnO thin films were deposited on (0001) sapphire substrates by pulsed laser deposition (PLD) technique using an Nd:YAG laser with a wavelength of 355 nm. The influence of the deposition parameters, such as oxygen pressure, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiment was performed for substrate temperatures in the range 200-600 °C. The deposition chamber was filled with the oxygen at working pressures between 10-6 and 5×10-1 Torr. According to observations, the intensity of the light emission of laser-ablated ZnO thin films increased as substrate temperatures increased from 200 to 600 °C. We investigated the structural, electrical and optical properties of ZnO thin films using X-ray diffraction (XRD), van der Paul Hall measurements, photoluminescence (PL), and Rutherford backscattering spectrometry (RBS).

Original languageEnglish
Pages (from-to)458-461
Number of pages4
JournalApplied Surface Science
Publication statusPublished - 2000 Feb 1
EventThe Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference (ICPEPA-3) - Strasbourg, France
Duration: 1999 Jun 11999 Jun 4

Bibliographical note

Funding Information:
The authors wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 1998.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Pulsed laser deposition of ZnO thin films for applications of light emission'. Together they form a unique fingerprint.

Cite this