Pulsed Gate Switching of MoS₂ Field-Effect Transistor Based on Flexible Polyimide Substrate for Ultrasonic Detectors

Engineering

• Field-Effect Transistor 80%
• MoS2 80%
• High Speed 80%
• Detection 60%
• Piezoelectric 40%
• Switching 40%
• Stability 40%
• Current Ratio 20%
• Power Level 20%
• Flexible Electronics 20%
• Current Drain 20%
• Linearity 20%
• Ultrasonics 20%
• Potential Application 20%
• Molybdenum Disulfide 20%
• Mechanical Performance 20%
• Substrates 20%
• Development 20%
• Applications 20%
• Electronic Devices 20%

Physics

• Ultrasound 100%
• High Speed 80%
• Detection 60%
• Piezoelectricity 40%
• Switching 40%
• Stability 40%
• Threshold Voltage 20%
• Flexible Electronics 20%
• Semiconductor 20%
• Vinylidene 20%
• Ethylene 20%
• Substrates 20%
• Utilization 20%
• Frequencies 20%
• Transferring 20%
• Mobility 20%

Material Science

• Devices 60%
• Optoelectronics 60%
• Detector 40%
• Electronics 40%
• Semiconductor Material 20%
• Polyimide 20%
• Mechanical Testing 20%