Pseudo NMOS based sense amplifier for high speed single-ended SRAM

Hanwool Jeong; Taewon Kim; Seong Ook Jung; Taejoong Song; Gyuhong Kim

doi:10.1109/ICECS.2014.7049989

Pseudo NMOS based sense amplifier for high speed single-ended SRAM

Hanwool Jeong
, Taewon Kim
, Seong Ook Jung
, Taejoong Song
, Gyuhong Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Pseudo nMOS based sense amplifier (PNSA) is proposed for high speed single-ended SRAM sensing. The voltage characteristic of pseudo nMOS is utilized to resolve the performance problem of the conventional domino sensing due to full swing bit-line requirement. Increase in dynamic power due to always-on pull-up pMOS in the pseudo nMOS structure is mitigated by introducing a feedback path. As a result, with less than 40% power overhead, the PNSA shows approximate twice better performance compared to the conventional domino sensing scheme.

Original language	English
Title of host publication	2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	331-334
Number of pages	4
ISBN (Electronic)	9781479942428
DOIs	https://doi.org/10.1109/ICECS.2014.7049989
Publication status	Published - 2014
Event	2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014 - Marseille, France Duration: 2014 Dec 7 → 2014 Dec 10

Publication series

Name	2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014

Other

Other	2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014
Country/Territory	France
City	Marseille
Period	14/12/7 → 14/12/10

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ICECS.2014.7049989

Cite this

Jeong, H., Kim, T., Jung, S. O., Song, T., & Kim, G. (2014). Pseudo NMOS based sense amplifier for high speed single-ended SRAM. In 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014 (pp. 331-334). Article 7049989 (2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICECS.2014.7049989

Jeong, Hanwool ; Kim, Taewon ; Jung, Seong Ook et al. / Pseudo NMOS based sense amplifier for high speed single-ended SRAM. 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 331-334 (2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014).

@inproceedings{beedd2bf0c384ae38220d80d0ae5fac8,

title = "Pseudo NMOS based sense amplifier for high speed single-ended SRAM",

abstract = "Pseudo nMOS based sense amplifier (PNSA) is proposed for high speed single-ended SRAM sensing. The voltage characteristic of pseudo nMOS is utilized to resolve the performance problem of the conventional domino sensing due to full swing bit-line requirement. Increase in dynamic power due to always-on pull-up pMOS in the pseudo nMOS structure is mitigated by introducing a feedback path. As a result, with less than 40\% power overhead, the PNSA shows approximate twice better performance compared to the conventional domino sensing scheme.",

keywords = "Single-ended SRAM sensing, pseudo nMOS, sense amplifier",

author = "Hanwool Jeong and Taewon Kim and Jung, \{Seong Ook\} and Taejoong Song and Gyuhong Kim",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014 ; Conference date: 07-12-2014 Through 10-12-2014",

year = "2014",

doi = "10.1109/ICECS.2014.7049989",

language = "English",

series = "2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "331--334",

booktitle = "2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014",

address = "United States",

}

Jeong, H, Kim, T, Jung, SO, Song, T & Kim, G 2014, Pseudo NMOS based sense amplifier for high speed single-ended SRAM. in 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014., 7049989, 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014, Institute of Electrical and Electronics Engineers Inc., pp. 331-334, 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014, Marseille, France, 14/12/7. https://doi.org/10.1109/ICECS.2014.7049989

Pseudo NMOS based sense amplifier for high speed single-ended SRAM. / Jeong, Hanwool; Kim, Taewon; Jung, Seong Ook et al.
2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 331-334 7049989 (2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Pseudo NMOS based sense amplifier for high speed single-ended SRAM

AU - Jeong, Hanwool

AU - Kim, Taewon

AU - Jung, Seong Ook

AU - Song, Taejoong

AU - Kim, Gyuhong

PY - 2014

Y1 - 2014

N2 - Pseudo nMOS based sense amplifier (PNSA) is proposed for high speed single-ended SRAM sensing. The voltage characteristic of pseudo nMOS is utilized to resolve the performance problem of the conventional domino sensing due to full swing bit-line requirement. Increase in dynamic power due to always-on pull-up pMOS in the pseudo nMOS structure is mitigated by introducing a feedback path. As a result, with less than 40% power overhead, the PNSA shows approximate twice better performance compared to the conventional domino sensing scheme.

AB - Pseudo nMOS based sense amplifier (PNSA) is proposed for high speed single-ended SRAM sensing. The voltage characteristic of pseudo nMOS is utilized to resolve the performance problem of the conventional domino sensing due to full swing bit-line requirement. Increase in dynamic power due to always-on pull-up pMOS in the pseudo nMOS structure is mitigated by introducing a feedback path. As a result, with less than 40% power overhead, the PNSA shows approximate twice better performance compared to the conventional domino sensing scheme.

KW - Single-ended SRAM sensing

KW - pseudo nMOS

KW - sense amplifier

UR - https://www.scopus.com/pages/publications/84925428127

UR - https://www.scopus.com/pages/publications/84925428127#tab=citedBy

U2 - 10.1109/ICECS.2014.7049989

DO - 10.1109/ICECS.2014.7049989

M3 - Conference contribution

AN - SCOPUS:84925428127

T3 - 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014

SP - 331

EP - 334

BT - 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014

Y2 - 7 December 2014 through 10 December 2014

ER -

Jeong H, Kim T, Jung SO, Song T, Kim G. Pseudo NMOS based sense amplifier for high speed single-ended SRAM. In 2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 331-334. 7049989. (2014 21st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2014). doi: 10.1109/ICECS.2014.7049989

Pseudo NMOS based sense amplifier for high speed single-ended SRAM

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