Prospect of tunneling green transistor for 0.1V CMOS

Chenming Hu; Pratik Patel; Anupama Bowonder; Kanghoon Jeon; Sung Hwan Kim; Wei Yip Loh; Chang Yong Kang; Jungwoo Oh; Prashant Majhi; Ali Javey; Tsu Jae King Liu; Raj Jammy

doi:10.1109/IEDM.2010.5703372

Prospect of tunneling green transistor for 0.1V CMOS

Chenming Hu, Pratik Patel, Anupama Bowonder, Kanghoon Jeon, Sung Hwan Kim, Wei Yip Loh, Chang Yong Kang, Jungwoo Oh, Prashant Majhi, Ali Javey, Tsu Jae King Liu, Raj Jammy

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

66 Citations (Scopus)

Abstract

Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8" wafers. Large I_ON at low V_DD are possible according to TCAD simulations but awaits verification. V_DD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound semiconductors.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	16.1.1-16.1.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703372
Publication status	Published - 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 2010 Dec 6 → 2010 Dec 8

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	10/12/6 → 10/12/8

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2010.5703372

Cite this

Hu, C., Patel, P., Bowonder, A., Jeon, K., Kim, S. H., Loh, W. Y., Kang, C. Y., Oh, J., Majhi, P., Javey, A., Liu, T. J. K., & Jammy, R. (2010). Prospect of tunneling green transistor for 0.1V CMOS. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 16.1.1-16.1.4). [5703372] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703372

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title = "Prospect of tunneling green transistor for 0.1V CMOS",

abstract = "Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8{"} wafers. Large ION at low VDD are possible according to TCAD simulations but awaits verification. VDD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound semiconductors.",

author = "Chenming Hu and Pratik Patel and Anupama Bowonder and Kanghoon Jeon and Kim, {Sung Hwan} and Loh, {Wei Yip} and Kang, {Chang Yong} and Jungwoo Oh and Prashant Majhi and Ali Javey and Liu, {Tsu Jae King} and Raj Jammy",

year = "2010",

doi = "10.1109/IEDM.2010.5703372",

language = "English",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "16.1.1--16.1.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Hu, C, Patel, P, Bowonder, A, Jeon, K, Kim, SH, Loh, WY, Kang, CY, Oh, J, Majhi, P, Javey, A, Liu, TJK & Jammy, R 2010, Prospect of tunneling green transistor for 0.1V CMOS. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703372, Technical Digest - International Electron Devices Meeting, IEDM, pp. 16.1.1-16.1.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703372

TY - GEN

T1 - Prospect of tunneling green transistor for 0.1V CMOS

AU - Hu, Chenming

AU - Patel, Pratik

AU - Bowonder, Anupama

AU - Jeon, Kanghoon

AU - Kim, Sung Hwan

AU - Loh, Wei Yip

AU - Kang, Chang Yong

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Javey, Ali

AU - Liu, Tsu Jae King

AU - Jammy, Raj

PY - 2010

Y1 - 2010

N2 - Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8" wafers. Large ION at low VDD are possible according to TCAD simulations but awaits verification. VDD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound semiconductors.

AB - Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8" wafers. Large ION at low VDD are possible according to TCAD simulations but awaits verification. VDD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound semiconductors.

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U2 - 10.1109/IEDM.2010.5703372

DO - 10.1109/IEDM.2010.5703372

M3 - Conference contribution

AN - SCOPUS:79951831857

SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 16.1.1-16.1.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

Prospect of tunneling green transistor for 0.1V CMOS

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