Properties of Pb(Zr0.52Ti0.48)O3, SrBi2Ta2O9, and Nd2Ti 2O7 in a MFIS of Y2O3 insulator base structure for Fe FET

Woo Sic Kim; Hong Sub Lee; Hyung Ho Park; Yun Taek Hwang

doi:10.1080/00150193.2011.568308

Properties of Pb(Zr_0.52Ti_0.48)O₃, SrBi₂Ta₂O₉, and Nd₂Ti ₂O₇ in a MFIS of Y₂O₃ insulator base structure for Fe FET

Woo Sic Kim, Hong Sub Lee, Hyung Ho Park, Yun Taek Hwang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Ferroelectric films with three different typical structures, Pb(Zr _0.52Ti_0.48)O₃ (PZT) with Perovskite, SrBi ₂Ta₂O₉ (SBT) with layered-Perovskite, and Nd₂Ti₂O₇ (NT) with pseudo-pyrochlore, were prepared on Y₂O₃ to form a metal-ferroelectric- insulatorsemiconductor structure. Our work involves understanding the relationships between retention properties and ferroelectric properties including interface and layer uniformity and insulator layer. NT possessed a relatively larger memory window and better retention property than SBT and PZT. Low permittivity, high coercive field, stable interface, and phase formation without compositional deviation from stoichiometry were found to be the most important control factors for a ferroelectric field effect transistor.

Original language	English
Pages (from-to)	1-10
Number of pages	10
Journal	Ferroelectrics
Volume	413
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2011.568308
Publication status	Published - 2011

Bibliographical note

Funding Information:
This work was supported by Hynix Semiconductor Inc. of Korea. This work was also supported by the second stage of the Brain Korea 21 project in 2009.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1080/00150193.2011.568308

Cite this

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title = "Properties of Pb(Zr0.52Ti0.48)O3, SrBi2Ta2O9, and Nd2Ti 2O7 in a MFIS of Y2O3 insulator base structure for Fe FET",

abstract = "Ferroelectric films with three different typical structures, Pb(Zr 0.52Ti0.48)O3 (PZT) with Perovskite, SrBi 2Ta2O9 (SBT) with layered-Perovskite, and Nd2Ti2O7 (NT) with pseudo-pyrochlore, were prepared on Y2O3 to form a metal-ferroelectric- insulatorsemiconductor structure. Our work involves understanding the relationships between retention properties and ferroelectric properties including interface and layer uniformity and insulator layer. NT possessed a relatively larger memory window and better retention property than SBT and PZT. Low permittivity, high coercive field, stable interface, and phase formation without compositional deviation from stoichiometry were found to be the most important control factors for a ferroelectric field effect transistor.",

author = "Kim, {Woo Sic} and Lee, {Hong Sub} and Park, {Hyung Ho} and Hwang, {Yun Taek}",

note = "Funding Information: This work was supported by Hynix Semiconductor Inc. of Korea. This work was also supported by the second stage of the Brain Korea 21 project in 2009.",

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T1 - Properties of Pb(Zr0.52Ti0.48)O3, SrBi2Ta2O9, and Nd2Ti 2O7 in a MFIS of Y2O3 insulator base structure for Fe FET

AU - Kim, Woo Sic

AU - Lee, Hong Sub

AU - Park, Hyung Ho

AU - Hwang, Yun Taek

N1 - Funding Information: This work was supported by Hynix Semiconductor Inc. of Korea. This work was also supported by the second stage of the Brain Korea 21 project in 2009.

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AB - Ferroelectric films with three different typical structures, Pb(Zr 0.52Ti0.48)O3 (PZT) with Perovskite, SrBi 2Ta2O9 (SBT) with layered-Perovskite, and Nd2Ti2O7 (NT) with pseudo-pyrochlore, were prepared on Y2O3 to form a metal-ferroelectric- insulatorsemiconductor structure. Our work involves understanding the relationships between retention properties and ferroelectric properties including interface and layer uniformity and insulator layer. NT possessed a relatively larger memory window and better retention property than SBT and PZT. Low permittivity, high coercive field, stable interface, and phase formation without compositional deviation from stoichiometry were found to be the most important control factors for a ferroelectric field effect transistor.

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