@inproceedings{0097114006e3425c9310ed785b418e09,
title = "Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates",
abstract = "The flexible organic-inorganic thin film transistors (OITFTs) were fabricated with the structure of Al/ZnO/PVP/Al on PES (polyether sulfone) flexible substrate. PVP [poly-4-vinylphenol] organic gate insulator was coated on Al/PES film by the spin coating method. ZnO active channel layer was deposited on PVP/Si substrate by using atomic layer deposition (ALD) at various temperatures from 80 ~ 140 °C. The structural and electrical properties of ZnO films were analyzed by X-ray diffraction (XRD) and hall-effect measurement system. The carrier concentration and resistivity of ZnO film deposited at 100 °C were found to be about 1017 and 37.7 Ω·cm, respectively. The field effect mobility (μ) and threshold voltage (V TH) of the prepared OITFT were about 0.01 cm2/V·s and 12 V, respectively. The I on/off switching ratio was about 104.",
author = "Gong, {Su Cheol} and Yoo, {Byung Chul} and Shin, {Ik Sub} and Hyungtag Jeon and Park, {Hyung Ho} and Chang, {Ho Jung}",
year = "2009",
doi = "10.1117/12.808357",
language = "English",
isbn = "9780819474636",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Zinc Oxide Materials and Devices IV",
note = "Zinc Oxide Materials and Devices IV ; Conference date: 25-01-2009 Through 28-01-2009",
}