Abstract
Challenges have arisen in selecting suitable candidates for interconnects and metal contacts due to the exponential increase in metal resistivity at scaled pitches. Molybdenum (Mo) has emerged as a promising alternative to the traditional metals such as copper or tungsten owing to its low electrical resistivity and electron mean free path. In this study, we investigated the formation of a molybdenum film grown by thermal atomic layer deposition (ALD) using a MoO2Cl2 solid precursor and H2 and NH3 gases as the reducing agents. A molybdenum nitride film served as the seed layer on a SiO2 substrate before molybdenum film deposition. The analysis focused on the film's phase, morphology, chemical bonding states, and resistivity across various thicknesses. X-ray diffraction (XRD) confirmed the presence of polycrystalline BCC planes. Our analyses confirmed the successful growth of the molybdenum metal thin film, which, at a thickness of 10 nm, exhibited a record-low resistivity of approximately 13 μΩ cm.
Original language | English |
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Article number | 032405 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 42 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2024 May 1 |
Bibliographical note
Publisher Copyright:© 2024 Author(s).
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films