Properties of flexible phosphorescence polymer light emitting diodes coated on polyethylenenaphthalate plastic substrates

Seung Jun Baek; Su Choel Gong; Young Chul Chang; Hyung Ho Park; Hyeongtag Jeon; Ho Jung Chang

doi:10.1166/jnn.2012.4582

Properties of flexible phosphorescence polymer light emitting diodes coated on polyethylenenaphthalate plastic substrates

Seung Jun Baek, Su Choel Gong, Young Chul Chang, Hyung Ho Park, Hyeongtag Jeon, Ho Jung Chang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Flexible phosphorescence polymer light emitting diodes (PhPLEDs) with PEN/ITO/PEDOT:PSS/ PVK:Ir(ppy)3/TPBI/LiF/Al structure were fabricated to investigate the effects of Ir(ppy)3 doping concentrations on the optical and electrical properties of the devices. PVK and Ir(ppy)3 conjugated polymers as host and guest materials in the emission layer were spun coated at various concentrations of Ir(ppy)3 ranging from 2.0 to 8.0 vol%. As the concentration of Ir(ppy)3 increased from 2.0 to 6.0 vol%, the electrical and optical properties of the flexible PhPLEDs were improved clearly. Maximum luminance and current density were obtained for a PhPLED with an Ir(ppy)3 concentration of 6.0 vol%, with 6815 cd/m2 and 393 mA/cm2 at 9 V. The current efficiency tends to increase with the Ir(ppy)3 concentration, because of the formation of the excitons required to emit light.

Original language	English
Pages (from-to)	1585-1588
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	12
Issue number	2
DOIs	https://doi.org/10.1166/jnn.2012.4582
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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title = "Properties of flexible phosphorescence polymer light emitting diodes coated on polyethylenenaphthalate plastic substrates",

abstract = "Flexible phosphorescence polymer light emitting diodes (PhPLEDs) with PEN/ITO/PEDOT:PSS/ PVK:Ir(ppy)3/TPBI/LiF/Al structure were fabricated to investigate the effects of Ir(ppy)3 doping concentrations on the optical and electrical properties of the devices. PVK and Ir(ppy)3 conjugated polymers as host and guest materials in the emission layer were spun coated at various concentrations of Ir(ppy)3 ranging from 2.0 to 8.0 vol%. As the concentration of Ir(ppy)3 increased from 2.0 to 6.0 vol%, the electrical and optical properties of the flexible PhPLEDs were improved clearly. Maximum luminance and current density were obtained for a PhPLED with an Ir(ppy)3 concentration of 6.0 vol%, with 6815 cd/m2 and 393 mA/cm2 at 9 V. The current efficiency tends to increase with the Ir(ppy)3 concentration, because of the formation of the excitons required to emit light.",

author = "Baek, {Seung Jun} and Gong, {Su Choel} and Chang, {Young Chul} and Park, {Hyung Ho} and Hyeongtag Jeon and Chang, {Ho Jung}",

year = "2012",

doi = "10.1166/jnn.2012.4582",

language = "English",

volume = "12",

pages = "1585--1588",

journal = "Journal of Nanoscience and Nanotechnology",

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publisher = "American Scientific Publishers",

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T1 - Properties of flexible phosphorescence polymer light emitting diodes coated on polyethylenenaphthalate plastic substrates

AU - Baek, Seung Jun

AU - Gong, Su Choel

AU - Chang, Young Chul

AU - Park, Hyung Ho

AU - Jeon, Hyeongtag

AU - Chang, Ho Jung

PY - 2012

Y1 - 2012

N2 - Flexible phosphorescence polymer light emitting diodes (PhPLEDs) with PEN/ITO/PEDOT:PSS/ PVK:Ir(ppy)3/TPBI/LiF/Al structure were fabricated to investigate the effects of Ir(ppy)3 doping concentrations on the optical and electrical properties of the devices. PVK and Ir(ppy)3 conjugated polymers as host and guest materials in the emission layer were spun coated at various concentrations of Ir(ppy)3 ranging from 2.0 to 8.0 vol%. As the concentration of Ir(ppy)3 increased from 2.0 to 6.0 vol%, the electrical and optical properties of the flexible PhPLEDs were improved clearly. Maximum luminance and current density were obtained for a PhPLED with an Ir(ppy)3 concentration of 6.0 vol%, with 6815 cd/m2 and 393 mA/cm2 at 9 V. The current efficiency tends to increase with the Ir(ppy)3 concentration, because of the formation of the excitons required to emit light.

AB - Flexible phosphorescence polymer light emitting diodes (PhPLEDs) with PEN/ITO/PEDOT:PSS/ PVK:Ir(ppy)3/TPBI/LiF/Al structure were fabricated to investigate the effects of Ir(ppy)3 doping concentrations on the optical and electrical properties of the devices. PVK and Ir(ppy)3 conjugated polymers as host and guest materials in the emission layer were spun coated at various concentrations of Ir(ppy)3 ranging from 2.0 to 8.0 vol%. As the concentration of Ir(ppy)3 increased from 2.0 to 6.0 vol%, the electrical and optical properties of the flexible PhPLEDs were improved clearly. Maximum luminance and current density were obtained for a PhPLED with an Ir(ppy)3 concentration of 6.0 vol%, with 6815 cd/m2 and 393 mA/cm2 at 9 V. The current efficiency tends to increase with the Ir(ppy)3 concentration, because of the formation of the excitons required to emit light.

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Properties of flexible phosphorescence polymer light emitting diodes coated on polyethylenenaphthalate plastic substrates

Abstract

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