Abstract
Amorphous silicon thin films were formed by chemical vapor deposition of reactive particle beam assisted inductively coupled plasma type with various reflector bias voltages. During the deposition, the substrate was heated at 150 °C. The effects of reflector bias voltage on the physical and chemical properties of the films were systematically studied. X-ray diffraction and Raman spectroscopy results showed that the deposited films were amorphous and the films under higher reflector voltage had higher internal energy to be easily crystallized. The chemical state of amorphous silicon films was revealed as metallic bonding of Si atoms by using X-ray photoelectron spectroscopy. An increase in reflector voltage induced an increase of surface morphology of films and optical bandgap and a decrease of photoconductivity.
| Original language | English |
|---|---|
| Pages (from-to) | 7372-7376 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 518 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2010 Oct 1 |
Bibliographical note
Funding Information:This work was supported by the IT R&D program of MKE/KEIT . [KI002182, TFT backplane technology for next generation display].
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry