Pronounced Optoelectronic Effect in n-n ReS₂Homostructure

Two-dimensional layered materials have attracted attention for optoelectronic applications owing to their remarkable photonic properties. Here, we report a homojunction device fabricated using n-type ReS₂flakes; the device exhibits p-n diode characteristics. The band structures of 1-5 L ReS₂are theoretically calculated, and the insensitivity of work function to the thickness is experimentally investigated using Kelvin probe force microscopy. The contact resistance and intrinsic mobility of ReS₂field-effect transistors with different thicknesses are evaluated using the Y-function method (YFM). As the thickness of the flakes increases, the contact resistance decreases while the intrinsic mobility increases, leading to a reduction in the threshold voltage. Moreover, the rectifying behavior of a vertical ReS₂(thin)-ReS₂(thick) homostructure is measured at various bias and gate voltages, where the devices exhibit a noticeable rectification ratio of ∼4 × 10²at V_d= 5 V and V_g= 20 V. The ideality factor of the devices is ∼1.16 at V_g= -20 V. In addition, broadband near-infrared (NIR) response of the single-flake homostructure of ReS₂is observed, and it exhibited a responsivity of 170.9 A W^-1at 365 nm. Our study of the ReS₂homostructure leads to the advancement in electronic devices, such as photodetectors, transistors, and photovoltaic cells of new technology.