Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature

Dong Hyuk Chae; Tae Sik Yoon; Dae Hwan Kim; Jang Yeon Kwon; Ki Bum Kim; Jong Duk Lee; Byung Gook Park

Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature

Dong Hyuk Chae, Tae Sik Yoon, Dae Hwan Kim, Jang Yeon Kwon, Ki Bum Kim, Jong Duk Lee, Byung Gook Park

School of Integrated Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

A single electron memory cell is fabricated using SiGe nanocrystal array and multilevel programming characteristics due to the Coulomb blockade effect. Time-resolved programming characteristics showed a collective behavior in which electrons are charged one-by-one per nanocrystal. Reduction of tunneling rate in the course of the programming process is explained by an interaction due to capacitive coupling among closely spaced nanocrystals.

Original language	English
Pages	140-141
Number of pages	2
Publication status	Published - 1999
Event	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: 1999 Jun 28 → 1999 Jun 30

Conference

Conference	Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
City	Santa Barbara, CA, USA
Period	99/6/28 → 99/6/30

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

@conference{ecfc5564373640f1b34c1973afa62e81,

title = "Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature",

abstract = "A single electron memory cell is fabricated using SiGe nanocrystal array and multilevel programming characteristics due to the Coulomb blockade effect. Time-resolved programming characteristics showed a collective behavior in which electrons are charged one-by-one per nanocrystal. Reduction of tunneling rate in the course of the programming process is explained by an interaction due to capacitive coupling among closely spaced nanocrystals.",

author = "Chae, {Dong Hyuk} and Yoon, {Tae Sik} and Kim, {Dae Hwan} and Kwon, {Jang Yeon} and Kim, {Ki Bum} and Lee, {Jong Duk} and Park, {Byung Gook}",

year = "1999",

language = "English",

pages = "140--141",

note = "Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) ; Conference date: 28-06-1999 Through 30-06-1999",

}

Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature. / Chae, Dong Hyuk; Yoon, Tae Sik; Kim, Dae Hwan et al.
1999. 140-141 Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature

AU - Chae, Dong Hyuk

AU - Yoon, Tae Sik

AU - Kim, Dae Hwan

AU - Kwon, Jang Yeon

AU - Kim, Ki Bum

AU - Lee, Jong Duk

AU - Park, Byung Gook

PY - 1999

Y1 - 1999

N2 - A single electron memory cell is fabricated using SiGe nanocrystal array and multilevel programming characteristics due to the Coulomb blockade effect. Time-resolved programming characteristics showed a collective behavior in which electrons are charged one-by-one per nanocrystal. Reduction of tunneling rate in the course of the programming process is explained by an interaction due to capacitive coupling among closely spaced nanocrystals.

AB - A single electron memory cell is fabricated using SiGe nanocrystal array and multilevel programming characteristics due to the Coulomb blockade effect. Time-resolved programming characteristics showed a collective behavior in which electrons are charged one-by-one per nanocrystal. Reduction of tunneling rate in the course of the programming process is explained by an interaction due to capacitive coupling among closely spaced nanocrystals.

UR - http://www.scopus.com/inward/record.url?scp=0033362264&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033362264&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033362264

SP - 140

EP - 141

T2 - Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC)

Y2 - 28 June 1999 through 30 June 1999

ER -

Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature

Abstract

Conference

All Science Journal Classification (ASJC) codes

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