Process driven oxygen redistribution and control in Si0.7Ge 0.3/HfO2/TaN gate stack film systems

Patrick S. Lysaght, Joseph C. Woicik, Jeff Huang, Jungwoo Oh, Byoung Gi Min, Paul D. Kirsch

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Bulk and surface sensitive photoemission core line spectra have been acquired for Si and Ge following each step in the process sequence of Si 0.7Ge0.3/2 nm HfO2/2.5 nm TaN/950 C gate stack film systems. Extended x-ray absorption fine structure measurements have confirmed Ge segregation and pileup to form a Ge-rich layer at the SiGe surface during Si oxidation. Transmission electron micrograph cross-sections with electron energy loss element profiles have verified the effectiveness of plasma nitridation for restricting SiGe oxidation and achieving <1 nm equivalent oxide thickness with gate leakage current density equivalent to that of Si substrates without the necessity of a Si cap for oxidation control.

Original languageEnglish
Article number084107
JournalJournal of Applied Physics
Issue number8
Publication statusPublished - 2011 Oct 15

Bibliographical note

Funding Information:
Use of the National Synchrotron Light Source, Brookhaven National Laboratory, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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