Prevention of hillock formation during micro-machining of silicon by using OTS-SAM and SiO2 coatings

T. S. Oh; H. J. Kim; D. E. Kim

doi:10.1016/j.cirp.2010.03.084

Prevention of hillock formation during micro-machining of silicon by using OTS-SAM and SiO₂ coatings

T. S. Oh, H. J. Kim, D. E. Kim

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The feasibility of using a dual coating system consisting of SiO ₂ and OTS-SAM thin films on the micro-machining characteristics of silicon wafer were investigated with the aim to eliminate the formation of undesirable hillocks. The outermost OTS-SAM coating was used as a sacrificial layer to pattern the SiO₂ film, which in turn served to pattern the silicon substrate. After selectively removing the OTS-SAM coating by micro-machining, HF and KOH chemical etching processes followed to remove the SiO₂ layer and create patterns on the silicon substrate. By this process, groove patterns of about 1 μm width could be successfully fabricated on a silicon wafer without the formation of undesirable hillocks.

Original language	English
Pages (from-to)	259-262
Number of pages	4
Journal	CIRP Annals - Manufacturing Technology
Volume	59
Issue number	1
DOIs	https://doi.org/10.1016/j.cirp.2010.03.084
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Mechanical Engineering
Industrial and Manufacturing Engineering

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10.1016/j.cirp.2010.03.084

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@article{56df153f88944aca93720275d592364b,

title = "Prevention of hillock formation during micro-machining of silicon by using OTS-SAM and SiO2 coatings",

abstract = "The feasibility of using a dual coating system consisting of SiO 2 and OTS-SAM thin films on the micro-machining characteristics of silicon wafer were investigated with the aim to eliminate the formation of undesirable hillocks. The outermost OTS-SAM coating was used as a sacrificial layer to pattern the SiO2 film, which in turn served to pattern the silicon substrate. After selectively removing the OTS-SAM coating by micro-machining, HF and KOH chemical etching processes followed to remove the SiO2 layer and create patterns on the silicon substrate. By this process, groove patterns of about 1 μm width could be successfully fabricated on a silicon wafer without the formation of undesirable hillocks.",

author = "Oh, {T. S.} and Kim, {H. J.} and Kim, {D. E.}",

year = "2010",

doi = "10.1016/j.cirp.2010.03.084",

language = "English",

volume = "59",

pages = "259--262",

journal = "CIRP Annals - Manufacturing Technology",

issn = "0007-8506",

publisher = "Elsevier USA",

number = "1",

}

TY - JOUR

T1 - Prevention of hillock formation during micro-machining of silicon by using OTS-SAM and SiO2 coatings

AU - Oh, T. S.

AU - Kim, H. J.

AU - Kim, D. E.

PY - 2010

Y1 - 2010

N2 - The feasibility of using a dual coating system consisting of SiO 2 and OTS-SAM thin films on the micro-machining characteristics of silicon wafer were investigated with the aim to eliminate the formation of undesirable hillocks. The outermost OTS-SAM coating was used as a sacrificial layer to pattern the SiO2 film, which in turn served to pattern the silicon substrate. After selectively removing the OTS-SAM coating by micro-machining, HF and KOH chemical etching processes followed to remove the SiO2 layer and create patterns on the silicon substrate. By this process, groove patterns of about 1 μm width could be successfully fabricated on a silicon wafer without the formation of undesirable hillocks.

AB - The feasibility of using a dual coating system consisting of SiO 2 and OTS-SAM thin films on the micro-machining characteristics of silicon wafer were investigated with the aim to eliminate the formation of undesirable hillocks. The outermost OTS-SAM coating was used as a sacrificial layer to pattern the SiO2 film, which in turn served to pattern the silicon substrate. After selectively removing the OTS-SAM coating by micro-machining, HF and KOH chemical etching processes followed to remove the SiO2 layer and create patterns on the silicon substrate. By this process, groove patterns of about 1 μm width could be successfully fabricated on a silicon wafer without the formation of undesirable hillocks.

UR - http://www.scopus.com/inward/record.url?scp=77955311031&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955311031&partnerID=8YFLogxK

U2 - 10.1016/j.cirp.2010.03.084

DO - 10.1016/j.cirp.2010.03.084

M3 - Article

AN - SCOPUS:77955311031

SN - 0007-8506

VL - 59

SP - 259

EP - 262

JO - CIRP Annals - Manufacturing Technology

JF - CIRP Annals - Manufacturing Technology

IS - 1

ER -

Prevention of hillock formation during micro-machining of silicon by using OTS-SAM and SiO₂ coatings

Abstract

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