Pretreatment of GaAs (001) for sulfur passivation with (NH4)2Sx

Min Gu Kang; Hyung Ho Park; Kyung Soo Suh; Jong Lam Lee

doi:10.1016/S0040-6090(96)08970-5

Pretreatment of GaAs (001) for sulfur passivation with (NH₄)₂S_x

Min Gu Kang, Hyung Ho Park, Kyung Soo Suh, Jong Lam Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Surface properties of GaAs (001) cleaned with H₃PO₄ or HCl solutions and passivated with (NH₄)₂S_x solution were analyzed using X-ray photoelectron spectroscopy. All of the treatments were carried out in a glove box under a nitrogen-controlled atmosphere. Every cleaning process produced elemental As with a 42.0 eV photoelectron binding energy. The generated elemental As increased with the etching capability of acid to GaAs and the cycling order of applying acid to GaAs. Successive sulfidation treatment resulted in the formation of an As-S bond with a 42.8 eV photoelectron binding energy. And the observed quantity of As-S bond was closely related to the elemental As concentration. Photoluminescent experiments showed that improvement of surface properties in sulfidation treated GaAs (001) mainly depends on the number of sulfur bonds.

Original language	English
Pages (from-to)	328-333
Number of pages	6
Journal	Thin Solid Films
Volume	290-291
DOIs	https://doi.org/10.1016/S0040-6090(96)08970-5
Publication status	Published - 1996 Dec 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(96)08970-5

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title = "Pretreatment of GaAs (001) for sulfur passivation with (NH4)2Sx",

abstract = "Surface properties of GaAs (001) cleaned with H3PO4 or HCl solutions and passivated with (NH4)2Sx solution were analyzed using X-ray photoelectron spectroscopy. All of the treatments were carried out in a glove box under a nitrogen-controlled atmosphere. Every cleaning process produced elemental As with a 42.0 eV photoelectron binding energy. The generated elemental As increased with the etching capability of acid to GaAs and the cycling order of applying acid to GaAs. Successive sulfidation treatment resulted in the formation of an As-S bond with a 42.8 eV photoelectron binding energy. And the observed quantity of As-S bond was closely related to the elemental As concentration. Photoluminescent experiments showed that improvement of surface properties in sulfidation treated GaAs (001) mainly depends on the number of sulfur bonds.",

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T1 - Pretreatment of GaAs (001) for sulfur passivation with (NH4)2Sx

AU - Kang, Min Gu

AU - Park, Hyung Ho

AU - Suh, Kyung Soo

AU - Lee, Jong Lam

PY - 1996/12/15

Y1 - 1996/12/15

N2 - Surface properties of GaAs (001) cleaned with H3PO4 or HCl solutions and passivated with (NH4)2Sx solution were analyzed using X-ray photoelectron spectroscopy. All of the treatments were carried out in a glove box under a nitrogen-controlled atmosphere. Every cleaning process produced elemental As with a 42.0 eV photoelectron binding energy. The generated elemental As increased with the etching capability of acid to GaAs and the cycling order of applying acid to GaAs. Successive sulfidation treatment resulted in the formation of an As-S bond with a 42.8 eV photoelectron binding energy. And the observed quantity of As-S bond was closely related to the elemental As concentration. Photoluminescent experiments showed that improvement of surface properties in sulfidation treated GaAs (001) mainly depends on the number of sulfur bonds.

AB - Surface properties of GaAs (001) cleaned with H3PO4 or HCl solutions and passivated with (NH4)2Sx solution were analyzed using X-ray photoelectron spectroscopy. All of the treatments were carried out in a glove box under a nitrogen-controlled atmosphere. Every cleaning process produced elemental As with a 42.0 eV photoelectron binding energy. The generated elemental As increased with the etching capability of acid to GaAs and the cycling order of applying acid to GaAs. Successive sulfidation treatment resulted in the formation of an As-S bond with a 42.8 eV photoelectron binding energy. And the observed quantity of As-S bond was closely related to the elemental As concentration. Photoluminescent experiments showed that improvement of surface properties in sulfidation treated GaAs (001) mainly depends on the number of sulfur bonds.

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Pretreatment of GaAs (001) for sulfur passivation with (NH₄)₂S_x

Abstract

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